Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Chen Jun-ning"'
Autor:
Xu, Xiao a, 1, Yang, Huan b, 1, Chen, Jun-Ning a, Hua, Li-Jiang-shan a, Wang, Rong-Yun a, Liu, Ting a, Shi, Ya-Nan a, Wu, Qing-Feng c, Liu, Xi d, Wang, Hong-Yuan e, Sun, Zhi-Ling f, Zhang, Hong g, ∗, Sun, Qiu-hua a, ∗∗
Publikováno v:
In Journal of Traditional and Complementary Medicine September 2022 12(5):518-528
Autor:
Zhou, Le a, Lou, Li-Li a, Wang, Wei a, Lin, Bin b, Chen, Jun-Ning b, Wang, Xiao-Bo c, Huang, Xiao-Xiao a, c, ⁎, Song, Shao-Jiang a, ⁎
Publikováno v:
In Journal of Functional Foods October 2017 37:322-329
Publikováno v:
In The Journal of China Universities of Posts and Telecommunications August 2014 21(4):77-82
Autor:
Wang Li-li, Chen Jun-ning
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 787:012014
This paper studies intermittency instability and its control in parallel converters. By numerical simulation, the intermittent subharmonic and chaos are captured with coupled interference signal, their characteristics are described by bifurcation dia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13579ced2cbf0fb45e29c1a24f63c0bf
https://doi.org/10.1088/1757-899x/787/1/012014
https://doi.org/10.1088/1757-899x/787/1/012014
Akademický článek
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Publikováno v:
Chinese Physics. 14:61-66
This paper presents an improved resonant parametric perturbation method based on the modulation of a nonlinear map for controlling chaos. The control target can be any periodic orbit, which is not necessarily what is embedded in the chaotic attractor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832eac694ac016fd52c4df14cfe682a0
https://doi.org/10.1088/1009-1963/14/1/013
https://doi.org/10.1088/1009-1963/14/1/013
Publikováno v:
Chinese Journal of Electronics. 24:550-551
We present a LC VCO design method of the multiple start-point global optimization. It is used to optimize VCO phase noise variation in different Process, supply voltage and temperature (PVT) conditions at the same time. Based on this method, we can d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed70df733206548a784dd993fab58d29
https://doi.org/10.1049/cje.2015.07.019
https://doi.org/10.1049/cje.2015.07.019
Publikováno v:
Solid-State Electronics. 50:1472-1474
As gate oxides become thinner, in conjunction with scaling of MOS technologies, a discrepancy arises between the gate oxide capacitance and the total gate capacitance, due to the increasing importance of the carrier distributions in the polysilicon e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d1b36e66533effc64898518e7d470b
https://doi.org/10.1016/j.sse.2006.06.006
https://doi.org/10.1016/j.sse.2006.06.006
Publikováno v:
4th IET International Conference on Wireless, Mobile & Multimedia Networks (ICWMMN 2011).
In order to solve the defects in performance for analog RF circuit in deep submicron process, this paper discusses a new type of LC oscillators, that is Digitally Controlled Oscillator (DCO), which uses digital RF method to achieve the technology req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503752ae0030d741d42d32edaf70abc8
https://doi.org/10.1049/cp.2011.0963
https://doi.org/10.1049/cp.2011.0963
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
In early days, our project team has analyzed the electric field, threshold voltage, capacitance, cut-off frequency and other characteristics of the double doping polysilicon gate MOSFET (DDPG-MOS), see references [1]. In this study, the process steps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7611a947fd3495ea6efa8bd1d028bb4
https://doi.org/10.1109/icsict.2010.5667395
https://doi.org/10.1109/icsict.2010.5667395