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Publikováno v:
In Surface & Coatings Technology 25 September 2013 231:38-41
Publikováno v:
In Thin Solid Films 2009 517(14):4192-4195
Autor:
Chen Chen Chung, Kartika Chandra Sahoo, Edward Yi Chang, Chi Lang Nguyen, Binh Tinh Tran, Kung Liang Lin
Publikováno v:
Electronic Materials Letters. 10:1063-1067
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cacc27d7140c758e56ac73a6c06119df
https://doi.org/10.1007/s13391-014-3164-0
https://doi.org/10.1007/s13391-014-3164-0
Publikováno v:
Journal of Crystal Growth. 401:648-651
Low stress, low defect density GaN was successfully grown on circle array patterned Si (111) substrate using AlN as the buffer followed by two steps growth of the GaN film. Raman measurement shows a reduction of in plane biaxial stress for the GaN fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10590cece0f6cd2ca4187cdf0eaae1a2
https://doi.org/10.1016/j.jcrysgro.2014.01.079
https://doi.org/10.1016/j.jcrysgro.2014.01.079
Autor:
Binh Tinh Tran, Ming Hung Han, Kung Liang Lin, Hung Wei Yu, Chun-Yen Chang, Chen Chen Chung, Yen Teng Ho, Edward Yi Chang
Publikováno v:
Electronic Materials Letters. 10:963-967
In this study, we investigate the effect of the shading factor of the front grid pattern on concentrated solar cell efficiency, taking the trade-off between the series resistance of the electrodes and the amount of incident light into consideration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068fbb1ff375aa51d7d79b34ff7d7b85
https://doi.org/10.1007/s13391-014-3201-z
https://doi.org/10.1007/s13391-014-3201-z
Autor:
Yen Teng Ho, Peichen Yu, Kung Liang Lin, Binh Tinh Tran, Chen Chen Chung, Hau-Vei Han, Edward Yi Chang, Hao-Chung Kuo, Hong Quan Nguyen, Hung Wei Yu
Publikováno v:
Electronic Materials Letters. 10:457-460
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f20a7056f67021147c3de6561f64c2d6
https://doi.org/10.1007/s13391-013-3202-3
https://doi.org/10.1007/s13391-013-3202-3
Autor:
Ching Hsiang Hsu, Jer-shen Maa, Krishna Pande, Chen Chen Chung, Edward Yi Chang, Hung Wei Yu, Hsun Jui Chang, Hong Quan Nguyen
Publikováno v:
IEEE Electron Device Letters. 35:1275-1277
Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::101cba265313d1b210ca0cbeeb986c46
https://doi.org/10.1109/led.2014.2361923
https://doi.org/10.1109/led.2014.2361923
Autor:
Chih Yung Huang, Chen Chen Chung, Chien-Chih Chen, Hao-Ming Chen, Binh Tinh Tran, Ching Chian Wang, Chen-Hauw Ming, Edward Yi Chang, Kung Liang Lin
Publikováno v:
ECS Transactions. 50:1-4
In this study, the growth of GaN-films-based light emitting diodes(LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfc581a3d5e09485e940c5d091f5a89
https://doi.org/10.1149/05048.0001ecst
https://doi.org/10.1149/05048.0001ecst
Autor:
Chen Chen Chung, Kung Liang Lin, Hong Quan Nguyen, Man Chi Huang, Tieng Tung Luong, Tran Binh Tinh, Quang Ho Luc, Hai Dang Trinh, Hung Wei Yu, Chi Lang Nguyen, Edward Chang Yi
Publikováno v:
ECS Transactions. 50:461-467
We present the effect of mult iple A lN buffer layers on characterizations of GaN film quality, which includes a thin high-low-h igh-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053cdac9c27303957293767555542fb8
https://doi.org/10.1149/05003.0461ecst
https://doi.org/10.1149/05003.0461ecst