Zobrazeno 1 - 10
of 375
pro vyhledávání: '"Chen, Zhaoying"'
Publikováno v:
In Biochemical Pharmacology September 2024 227
Publikováno v:
Applied Sciences, Vol 14, Iss 22, p 10255 (2024)
Deep hot dry rock (HDR) geothermal energy is a widespread and sustainable renewable energy that could be extracted for the decarbonisation of electricity generation. Measurements are essential for hydraulic fracturing in HDR monitoring, which can be
Externí odkaz:
https://doaj.org/article/ffca147b71e74f32b15dda8b0ccd3286
Autor:
Liu, Shangfeng, Yuan, Ye, Huang, Lijie, Zhang, Jin, Wang, Tao, Li, Tai, Kang, Junjie, Luo, Wei, Chen, Zhaoying, Sun, Xiaoxiao, Wang, Xinqiang
Ultraviolet-C light-emitting diodes (UVC-LEDs) have great application in pathogen inactivation under various kinds of situations, especially in the fight against the COVID-19. Unfortunately, its epitaxial wafers are so far limited to 2-inch size, whi
Externí odkaz:
http://arxiv.org/abs/2112.03069
Publikováno v:
In Advanced Powder Technology June 2024 35(6)
Autor:
Sun, Xiaonan, Hu, Shengyong, Wu, Xi, Chen, Zhaoying, Zhang, Yulong, Zhang, Xitu, Zhang, Jingjing
Publikováno v:
In Gas Science and Engineering April 2024 124
Autor:
Zhang, Xitu, Hu, Shengyong, Feng, Guorui, Li, Guofu, Li, Siyuan, Sun, Xiaonan, Guo, Shuyun, Chen, Zhaoying
Publikováno v:
In Advanced Powder Technology March 2024 35(3)
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is related to the low pyrolysis efficiency of NH3, which represents one
Externí odkaz:
http://arxiv.org/abs/2104.01064
Publikováno v:
In Advanced Powder Technology January 2024 35(1)
Publikováno v:
In Midwifery January 2024 128
Autor:
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating s
Externí odkaz:
http://arxiv.org/abs/2004.13089