Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Chen, Jim C."'
Publikováno v:
In Computers and Fluids 20 September 2014 101:273-290
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
An exponential correlation is found to exist between the number of added defects on polished blanket wafers and the inverse of defect size for particulate CMP defects. Smaller surface defects are much more abundant and more difficult to remove. Pad s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dec210092f25af7db5772e2f29f84f55
https://doi.org/10.1109/asmc51741.2021.9435652
https://doi.org/10.1109/asmc51741.2021.9435652
Autor:
Sanjay Mehta, Scott DeVries, Carol Boye, Wei-Tsu Tseng, Chen Jim C, Mary-Claire Silvestre, Thamarai S. Devarajan, Fee Li Lie, Massud A. Aminpur
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, a case study on control of BEOL defectivity in a systematic way for the future AI application is presented. A few novel methodologies were introduced to identify the source of defectivity in various BEOL sectors, such as, patterning, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ab67580a5a169b0d541b34e2414f61
https://doi.org/10.1109/asmc49169.2020.9185337
https://doi.org/10.1109/asmc49169.2020.9185337
Autor:
Chen, Jim C., Kim, Albert S.
Publikováno v:
In Advances in Colloid and Interface Science 2006 119(1):35-53
Autor:
Chen, Jim C., Kim, Albert S. *
Publikováno v:
In Advances in Colloid and Interface Science 2004 112(1):159-173
Publikováno v:
In Advances in Colloid and Interface Science 2004 107(2):83-108
Publikováno v:
In The American Journal of Geriatric Psychiatry Spring 2000 8(2):123-133
Autor:
Chen, Jim C., Seidel, Arza
Publikováno v:
Journal of Environmental Engineering. Oct2002, Vol. 128 Issue 10, p967. 7p.
Autor:
Chen, Jim C., McSlarrow, Kyle E.
Publikováno v:
The Business Lawyer, 1992 May 01. 47(3), 1031-1052.
Externí odkaz:
https://www.jstor.org/stable/40687319
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Quick calculation of capacitance without field solver simulations is desirable to evaluate process assumptions and predict interconnect performance with minimal computation time. At sub-10 nm technology nodes complex interconnect stacks and shrinking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d17a3e6a94fb9f63500088ae43ba43f4
https://doi.org/10.1109/iitc-amc.2016.7507711
https://doi.org/10.1109/iitc-amc.2016.7507711