Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chen, BoJia"'
Autor:
Chen, Bojia, Zhu, Jiyuan, Han, Qi, Wei, Shice, Zhang, Yu, Hu, Shen, Wu, Xuefeng, Zhang, David W., Sun, Qingqing, Zhang, Rong, Huang, Kai, Ji, Li
Publikováno v:
In Applied Surface Science 1 October 2024 669
Autor:
Zhu, Jiyuan, Hu, Shen, Chen, Bojia, Wei, Shice, Zhang, Yu, Wu, Xuefeng, Zou, Xingli, Lu, Xionggang, Sun, Qingqing, Zhang, David W., Ji, Li
Publikováno v:
Journal of Chemical Physics; 1/28/2024, Vol. 160 Issue 4, p1-10, 10p
Autor:
Zhu, Jiyuan, Hu, Shen, Chen, Bojia, Zhang, Yu, Wei, Shice, Guo, Xiangyu, Zou, Xingli, Lu, Xionggang, Sun, Qingqing, Zhang, David W., Ji, Li
Publikováno v:
Journal of Chemical Physics; 11/7/2023, Vol. 159 Issue 17, p1-10, 10p
Autor:
Lin, Ching-Hung1 (AUTHOR), Chen, BoJia2 (AUTHOR), Chao, Day-Yu2,3,4 (AUTHOR), Hsieh, Feng-Cheng1 (AUTHOR), Lai, Chien-Chen5 (AUTHOR), Wang, Wei-Chen5 (AUTHOR), Kuo, Cheng-Yu5 (AUTHOR), Yang, Chun-Chun1 (AUTHOR), Hsu, Hsuan-Wei1 (AUTHOR), Tam, Hon-Man-Herman1 (AUTHOR), Wu, Hung-Yi1 (AUTHOR) hwu2@dragon.nchu.edu.tw
Publikováno v:
Virology Journal. 10/12/2023, Vol. 20 Issue 1, p1-16. 16p.
Autor:
Lin, Ching-Hung1 (AUTHOR), Chen, BoJia2 (AUTHOR), Chao, Day-Yu2,3,4 (AUTHOR), Hsieh, Feng-Cheng1 (AUTHOR), Yang, Chun-Chun1 (AUTHOR), Hsu, Hsuan-Wei1 (AUTHOR), Tam, Hon-Man-Herman1 (AUTHOR), Wu, Hung-Yi1 (AUTHOR) hwu2@dragon.nchu.edu.tw
Publikováno v:
Virology Journal. 10/6/2023, Vol. 20 Issue 1, p1-13. 13p.
Akademický článek
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Autor:
Zhang, Yu, Hu, Shen, Chen, Pei-Yu, Zhu, Jiyuan, Chen, Bojia, Bai, Rongxu, Zhu, Hao, Chen, Lin, Zhang, David W., Lee, Jack C., Sun, Qingqing, Ekerdt, John G., Ji, Li
Publikováno v:
Nanoscale; 6/7/2023, Vol. 15 Issue 21, p9432-9439, 8p
Autor:
Zhu J; School of Microelectronics, Fudan University, Shanghai 200433, China., Hu S; School of Microelectronics, Fudan University, Shanghai 200433, China.; Jiashan Fudan Institute, Jiashan 314100, China., Chen B; School of Microelectronics, Fudan University, Shanghai 200433, China., Wei S; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang Y; School of Microelectronics, Fudan University, Shanghai 200433, China., Wu X; Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China., Zou X; State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Lu X; State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China., Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China.; Jiashan Fudan Institute, Jiashan 314100, China.; Hubei Yangtz Memory Laboratories, Wuhan 430205, China.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2024 Jan 28; Vol. 160 (4).
Autor:
Zhu J; School of Microelectronics, Fudan University, Shanghai 200433, China., Hu S; School of Microelectronics, Fudan University, Shanghai 200433, China., Chen B; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang Y; School of Microelectronics, Fudan University, Shanghai 200433, China., Wei S; School of Microelectronics, Fudan University, Shanghai 200433, China., Guo X; School of Microelectronics, Fudan University, Shanghai 200433, China., Zou X; State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Lu X; State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China., Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China.; Hubei Yangtz Memory Laboratories, Wuhan 430205, China.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2023 Nov 07; Vol. 159 (17).