Zobrazeno 1 - 10
of 2 677
pro vyhledávání: '"Chemical vapor deposition (CVD)"'
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract In this study, nitrogen (N) is doped into VO2 thin films through mist chemical vapor deposition (CVD), and the effect of the doping on metal–insulator transition (MIT) temperatures is investigated. The N‐doped VO2 thin films are grown on
Externí odkaz:
https://doaj.org/article/04f8f1b189cc4a92822c4e4b68f02157
Publikováno v:
In Journal of Alloys and Compounds 5 January 2025 1010
Publikováno v:
Crystals, Vol 14, Iss 8, p 673 (2024)
Silicon has dimensional limitations in following Moore’s law; thus, new 2D materials complementing Silicon are being researched. Molybdenum disulfide (MoS2) is a prospective material anticipated to bridge the gap to complement Silicon and enhance t
Externí odkaz:
https://doaj.org/article/6752a034fa0b496bb2c300f3c4e04ffc
Publikováno v:
Advanced Science, Vol 11, Iss 5, Pp n/a-n/a (2024)
Abstract Quantifying the intrinsic properties of 2D materials is of paramount importance for advancing their applications. Large‐scale production of 2D materials merits the need for approaches that provide direct information about the role of growt
Externí odkaz:
https://doaj.org/article/cdc45f477b5c4b2db0c6e0b50c93dded
Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
Autor:
Keyu Chen, Guan Yu Chen, Xinyi Hu, Hao Wu, Mingwei Gu, Yange Luan, Baoyue Zhang, Yihong Hu, Yinfen Cheng, Tao Tang, Haibo Huang, Liguo Chen, Jian Zhen Ou
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 2, Pp n/a-n/a (2024)
Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxid
Externí odkaz:
https://doaj.org/article/7752831987a2456492fbd3fa6bcb03f9
Publikováno v:
Micromachines, Vol 15, Iss 5, p 600 (2024)
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot wall chemical vapor deposition reactor. Comparing C3H8 and C2H4 as C sources, the sample grown with C2H4 exhibited a slower growth rate an
Externí odkaz:
https://doaj.org/article/7aa12f32baaf4b8183a4df427364d909
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 36, Pp n/a-n/a (2023)
Abstract Transition metal chalcogenides (TMCs) have attracted wide attentions as a class of promising material for both fundamental investigations and electronic applications due to their atomic thin thickness, dangling bond‐free surface, and excel
Externí odkaz:
https://doaj.org/article/77c2ef98535f43618dbe16f9e787582a
Publikováno v:
Heat Treatment and Surface Engineering, Vol 5, Iss 1 (2023)
ABSTRACTThe SiOC materials have shown great potential for a number of engineering applications owing to their excellent physical and chemical properties. Due to the unique microstructure of SiOC coatings, different variants of polymer pyrolysis and c
Externí odkaz:
https://doaj.org/article/ca0ccd65143049879e5a1b6343407b83
Publikováno v:
Frontiers in Neuroscience, Vol 17 (2023)
Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accur
Externí odkaz:
https://doaj.org/article/a4c17701382f492f8c70a4ec25384dd5
Autor:
Zitao Tang, Siwei Chen, Cynthia I. Osuala, Abdus Salam Sarkar, Grzegorz Hader, Aron Cummings, Stefan Strauf, Chunlei Qu, Eui-Hyeok Yang
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 208-214 (2023)
We present the observations of Aharonov-Bohm (AB) oscillations in chemical vapor deposition (CVD)-grown graphene rings via magnetotransport measurements at 4K under out-of-plane external magnetic fields up to +/−2.1 T. Incorporating a baseline subt
Externí odkaz:
https://doaj.org/article/4315eb89a6174e9fae7b8b3460b4d2aa