Zobrazeno 1 - 10
of 3 423
pro vyhledávání: '"Chemical mechanical polishing"'
Autor:
Hitomi Takahashi, Satoyuki Nomura
Publikováno v:
Tribology Online, Vol 19, Iss 3, Pp 194-208 (2024)
The mechanisms of chemical mechanical polishing (CMP) of copper (Cu) surface using a slurry containing hydrogen peroxide (H2O2) and silica abrasive grains were theoretically investigated. First, molecular dynamics (MD) simulations using ReaxFF were u
Externí odkaz:
https://doaj.org/article/2a6ee96802a841ed9935872815363239
Publikováno v:
Industrial Lubrication and Tribology, 2023, Vol. 76, Issue 1, pp. 50-58.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/ILT-08-2023-0257
Publikováno v:
Jin'gangshi yu moliao moju gongcheng, Vol 44, Iss 1, Pp 109-122 (2024)
To address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed. Molecular dynamics simulation analyze the dynamic evo
Externí odkaz:
https://doaj.org/article/1e4ea9eece62437fb6be4431792260b0
Autor:
Xuan-Bach Le, Sung-Hoon Choa
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1332 (2024)
Hybrid bonding technology has recently emerged as a promising solution for advanced semiconductor packaging technologies. However, several reliability issues still pose challenges for commercialization. In this study, we investigated the possibility
Externí odkaz:
https://doaj.org/article/48a03d1ae1644859b3aa4c2abae8456f
Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding
Publikováno v:
Friction, Vol 12, Iss 5, Pp 897-905 (2023)
Abstract With the rapid development of semiconductors, the number of materials needed to be polished sharply increases. The material properties vary significantly, posing challenges to chemical mechanical polishing (CMP). Accordingly, the study aimed
Externí odkaz:
https://doaj.org/article/3f504fd9ceb44ac086b7c685b55ccfb4
Publikováno v:
Nanomaterials, Vol 14, Iss 16, p 1371 (2024)
The stability of slurries used for chemical mechanical polishing (CMP) is a crucial concern in industrial chip production, influencing both the quality and cost-effectiveness of polishing fluids. In silicon wafer polishing, the conventional use of co
Externí odkaz:
https://doaj.org/article/f9c32b6ffbd6441b9ace10e1b859ff59
Publikováno v:
Friction, Vol 12, Iss 6, Pp 1119-1132 (2023)
Abstract The roughness of the contact surface exerts a vital role in rubbing. It is still a significant challenge to understand the microscopic contact of the rough surface at the atomic level. Herein, the rough surface with a special root mean squar
Externí odkaz:
https://doaj.org/article/6f8ba12e3b6847ddb410b3e1824c70b2
Autor:
Elena N. Abramova, Roman Yu. Kozlov, Anatoliy I. Khokhlov, Yuriy V. Syrov, Yuriy N. Parkhomenko
Publikováno v:
Конденсированные среды и межфазные границы, Vol 26, Iss 1 (2024)
Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, t
Externí odkaz:
https://doaj.org/article/748f52e95dce46bda70c3fef048843b9
Publikováno v:
Micromachines, Vol 15, Iss 6, p 754 (2024)
To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon carbide (SiC), molecular dynamics simulations based on a reactive force field were used to study the sliding process of silica (SiO2) abrasive particles on SiC s
Externí odkaz:
https://doaj.org/article/2dee8f2fc8b64b1fa1cc701d3844fb8e
Publikováno v:
Crystals, Vol 14, Iss 5, p 460 (2024)
The use of surfactants is crucial in the chemical–mechanical polishing fluid system for silicon wafers. This paper examines the impact of the functional group structure of polyoxyethylene-based nonionic surfactants and the variation in the polyoxye
Externí odkaz:
https://doaj.org/article/8af0f319cc224ee4a2bec4cd8ddc8acd