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pro vyhledávání: '"Chek Yee Ooi"'
Autor:
Soo King Lim, Chek Yee Ooi
Publikováno v:
World Journal of Nano Science and Engineering. :177-188
This paper presents the quasi-ballistic electron transport of a symmetric double-gate (DG) nano-MOSFET with 10 nm gate length and implementation of logical NOT transistor circuit using this nano-MOSFET. Theoretical calculation and simulation using Na
Autor:
Lim Soo King, Chek Yee Ooi
Publikováno v:
Jurnal Teknologi. 76
This paper presents a numerical simulation study for electrical characteristics of double-gate (DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics which are studied include subband energy (including unprimed and primed