Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chei-Chang Chen"'
Autor:
Cheng-I Lin, Chii-Wen Chen, Chei-Chang Chen, Yen-Ting Chiang, Feng-Renn Juang, Tse-Heng Chou, Yean-Kuen Fang
Publikováno v:
IEEE Sensors Journal. 10:1337-1341
The p-strain Si/i- heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i- heterojun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482d440d56c1d4cffd9c8cb2b09b8e75
https://doi.org/10.1109/jsen.2009.2039132
https://doi.org/10.1109/jsen.2009.2039132
Autor:
Jone-Fang Chen, J.M. Tsai, W.C. Lai, Jinn-Kong Sheu, Chei-Chang Chen, Yan-Kuin Su, Shoou-Jinn Chang, G.C. Chi
Publikováno v:
IEEE Sensors Journal. 2:366-371
Indium-tin-oxide (ITO), Au, Ni, and Pt layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, it was found that we could improve the optical properties of the ITO layers and achieve a maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08fcc962e61881b38ef285d13dd45c77
https://doi.org/10.1109/jsen.2002.802240
https://doi.org/10.1109/jsen.2002.802240
Autor:
Yen-Ting Chiang, Yean-Kuen Fang, Tse-Heng Chou, Feng-Renn Juang, Chei-Chang Chen, Cheng-I Lin, Chii-Wen Chen
Publikováno v:
IEEE Sensors Journal; Aug2010, Vol. 10 Issue 8, p1337-1341, 5p