Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Cheh-Ming Liu"'
Autor:
Cheh-Ming Liu, S.W. Duncan, D.-W. Tu, J.J. Rosenberg, David B. Rutledge, M.P. De Lisio, A. Moussessian
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:2136-2144
A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054c6485091e72428055a48b8605a933
https://doi.org/10.1109/22.556440
https://doi.org/10.1109/22.556440
Publikováno v:
International Journal of Infrared and Millimeter Waves. 16:1901-1909
A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::038bc6f728eba7871f872306aa31759f
https://doi.org/10.1007/bf02072546
https://doi.org/10.1007/bf02072546
Publikováno v:
IEEE Antennas and Propagation Society International Symposium. 1999 Digest. Held in conjunction with: USNC/URSI National Radio Science Meeting (Cat. No.99CH37010).
A new modified gamma-matched dielectric-loaded antenna suitable for terrestrial cellular applications is presented. A lumped-element equivalent circuit model is developed based on the electrical contribution of different elements of the antenna. Meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f788bc4e1f7ba9c3adce5e5c5e94b2
https://doi.org/10.1109/aps.1999.789068
https://doi.org/10.1109/aps.1999.789068
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::014682646bd757896b4a72362b68ffa1
https://doi.org/10.1109/mwsym.1996.511227
https://doi.org/10.1109/mwsym.1996.511227
Publikováno v:
IEEE Antennas and Propagation Society International Symposium. 1995 Digest.
A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d0ab688a07fd9d9e6cdbc3ac502eaa1
https://doi.org/10.1109/aps.1995.530259
https://doi.org/10.1109/aps.1995.530259
Publikováno v:
1995 53rd Annual Device Research Conference Digest.
Summary form only given. A 36-element monolithic grid amplifier has been fabricated. The peak gain is 4 dB at 40 GHz with a 3-dB bandwidth of 800 MHz. We discuss the design and measurements for the monolithic grid amplifier. The grid includes base st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a59b37f4d477e9c16f782ea90e6ba8e7
https://doi.org/10.1109/drc.1995.496285
https://doi.org/10.1109/drc.1995.496285
Autor:
M.P. De Lisio, David B. Rutledge, J.J. Rosenberg, A. Moussessian, Cheh-Ming Liu, Emilio A. Sovero
Publikováno v:
IEEE Antennas and Propagation Society International Symposium. 1995 Digest.
A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5105dbe206ff63109322a4a1db04cee
https://doi.org/10.1109/aps.1995.530256
https://doi.org/10.1109/aps.1995.530256
We present a stability model for quasi-optical grid amplifiers. This model is useful for predicting and suppressing the common-mode oscillations that often occur in amplifier grids. Three stabilization techniques will be discussed. The first techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f88127dea0a32e19b8101f8565fec124
https://resolver.caltech.edu/CaltechAUTHORS:LIUieeemtt98
https://resolver.caltech.edu/CaltechAUTHORS:LIUieeemtt98
Autor:
Cheh-Ming Liu, Moonil Kim, Jonathan Hacker, Shi-Jie Li, S.W. Wedge, David B. Rutledge, M.P. De Lisio
A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b426c4df0ae9552078bffb230d942dbb
https://resolver.caltech.edu/CaltechAUTHORS:20120306-124144454
https://resolver.caltech.edu/CaltechAUTHORS:20120306-124144454
Publikováno v:
1995 53rd Annual Device Research Conference Digest; 1995, p92-93, 2p