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pro vyhledávání: '"Cheehow Lee"'
Autor:
Naigui Shang, Cheehow Lee, Zhangda Lin, Shuit-Tong Lee, I. Bello, Ning Wang, Liang-Sheng Liao
Publikováno v:
Physical Review B. 62:17134-17137
Surface passivation is introduced to suppress the deleterious effect of Si surface oxides and thus enhance diamond heteroepitaxial nucleation. Surface composition and diamond nucleation and growth on H-, Br-, and I-passivated Si surfaces were studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8987c07d8be47b66405ff49927d7026
https://doi.org/10.1103/physrevb.62.17134
https://doi.org/10.1103/physrevb.62.17134
