Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chee-Sheng Ho"'
Autor:
Soo Jin Chua, Chee Sheng Ho, Hui Pan, Hailong Zhou, T. K. Chan, Thomas Osipowicz, Yanping Feng
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 260:299-303
As a wide band gap (3.37 eV) semiconductor, ZnO is of great interest for applications in opto- and nano-electronics, as technologies of synthesis for ZnO layers are developed. It has been reported that the blue-UV generation can be realized in ZnO th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda1cafc8dff444e225780482ce7bf80
https://doi.org/10.1016/j.nimb.2007.02.037
https://doi.org/10.1016/j.nimb.2007.02.037
Autor:
Ganesh S. Samudra, Chee-Sheng Ho, Dongzhi Chi, Tsung-Yang Liow, Sukant K. Tripathy, Rinus T. P. Lee, Yee-Chia Yeo, Kian-Ming Tan
Publikováno v:
Journal of The Electrochemical Society. 154:H361
Micro-Raman spectroscopy has been applied to study the solid-state reaction of Er on Si(001) substrates. The Raman peaks observed at 204, 236, and 416 cm -1 were clearly established to be associated with the Ersi 1.7 7 phase. The Raman data correlate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b1859318566c3d269e0daeba57de59
https://doi.org/10.1149/1.2710201
https://doi.org/10.1149/1.2710201
Autor:
Rinus Tek-Po Lee, Kian-Ming Tan, Tsung-Yang Liow, Chee-Sheng Ho, Tripathy, S., Samudra, Ganesh S., Dong-Zhi Chi, Yee-Chia Yeo
Publikováno v:
Journal of The Electrochemical Society; May2007, Vol. 154 Issue 5, pH361-H364, 4p, 1 Chart, 4 Graphs