Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chee Wee Eng"'
Autor:
Ramasamy Chockalingam, Li Han Chen, Qian Chen, Ushasree Katakamsetty, Lanfei Xie, Juan Boon Tan, Xiaochong Guan, Chee Wee Eng, Soon Yoeng Tan, Li Pinghui
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Ahstract- Multi-level Metal-Oxide-Metal Capacitors (MOM) is widely utilized in CMOS process. It is an inter-digitated three dimensional multi-level finger capacitor structure formed in dual damascene copper metal layers in the Back-end-of-Line (BEOL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00afe0d523e653eaf8d49a245b17788f
https://doi.org/10.1109/ipfa.2018.8452535
https://doi.org/10.1109/ipfa.2018.8452535
Autor:
Simon T.H. Chan, Elgin Quek, Kheng-Chok Tee, K. H. Jo, Wai Shing Lau, W.K. Aw, Hyung-Rock Kim, Chee-Wee Eng, L. Chan, Kwang-Seng See, James Yong Meng Lee
Publikováno v:
Microelectronics Reliability. 48:919-922
For PMOS (p-channel metal–oxide–semiconductor) transistors isolated by shallow trench isolation (STI) technology, reverse narrow width effect (RNWE) was observed for large gate lengths such that the magnitude of the threshold voltage becomes smal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1751554c2131e85f5684eecca0021618
https://doi.org/10.1016/j.microrel.2008.02.005
https://doi.org/10.1016/j.microrel.2008.02.005
Publikováno v:
Japanese Journal of Applied Physics. 42:2621-2627
The original shift-and-ratio method tends to significantly over-estimate the effective channel length Leff of metal–oxide–silicon (MOS) transistors with halo/pocket implants because the carrier mobility of the short transistor tends to be smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e893c9b1c314d80c612e8dad1652d9b
https://doi.org/10.1143/jjap.42.2621
https://doi.org/10.1143/jjap.42.2621
Publikováno v:
MRS Proceedings. 913
Our observation is that both the on-current and off-current of state-of-the-art p-channel MOS transistors tend to become larger when the L-shaped spacer becomes smaller due to two different mechanisms: a decrease in the effective channel length Leff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecbd64ee434afa957c570ac728c3a315
https://doi.org/10.1557/proc-0913-d03-04
https://doi.org/10.1557/proc-0913-d03-04
Autor:
Kheng-Chok Tee, Vanissa Sei-Wei Lim, David Vigar, Lap Chan, Wai Shing Lau, Yao-Yao Jiang, Chee-Wee Eng, Alastair Trigg
Publikováno v:
Japanese Journal of Applied Physics. 43:1869
A modified shift-and-ratio (MS&R) method of extracting the effective channel length (L eff) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of L eff generated by this method is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68c5b66502d6e6f7977f6c32a873af3f
https://doi.org/10.1143/jjap.43.1869
https://doi.org/10.1143/jjap.43.1869
Autor:
Hong Liao, Kian-Meng Tee, Elgin Quek, Wai Shing Lau, Kheng-Chok Tee, L. Chan, Kwang-Seng See, Chee-Wee Eng
Publikováno v:
Japanese Journal of Applied Physics. 43:925
Local lattice strain around the channel in metal oxide semiconductor (MOS) transistors of 0.13 µm gate length using shallow trench isolation can be altered using different source–drain diffusion lengths (L ov). It is known that as L ov is reduced,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::972af678c8bd2201b4dd11bc29744a49
https://doi.org/10.1143/jjap.43.925
https://doi.org/10.1143/jjap.43.925