Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Chee Mang Ng"'
Publikováno v:
Journal of Hazardous Materials. 260:1-8
Current advanced oxidation processes (AOPs) are chemically and energetically intensive processes, which are undesirable for cost-effective and large-scale system water treatment and wastewater recycling. This study explored the Strontium Ferrite (SFO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2b89d810d7d21a2007202416a943f8f
https://doi.org/10.1016/j.jhazmat.2013.04.031
https://doi.org/10.1016/j.jhazmat.2013.04.031
Publikováno v:
Renewable Energy. 51:29-35
Surface tailoring and functionalization of an annealed TiO2 compact layer by H2SO4 acid was performed to improve the dye-sensitized solar cell (DSSC) performance. Compared to untreated counterpart, the acid-treated compact layer possesses a rougher s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83edf269f206f706097004660fc947bd
https://doi.org/10.1016/j.renene.2012.08.078
https://doi.org/10.1016/j.renene.2012.08.078
Publikováno v:
Journal of Nanomaterials, Vol 2013 (2013)
The need of barrier layer such as SiO2for carbon nanotubes (CNTs) growth limits their performance in electronic applications. In this study, conductive carbon/metal (carbon/cobalt—C:Co) composite films with the same metal content, but different sp2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90cdee8eed0410332347f232b8bdc072
https://doi.org/10.1155/2013/730952
https://doi.org/10.1155/2013/730952
Publikováno v:
Diamond and Related Materials. 30:48-52
Previous work has shown that pulsed laser annealing can be used to change the bonding structure of amorphous carbon films. In this paper, the effect of initial sp3 content on bonding structure of amorphous carbon upon pulsed laser annealing was studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::810e07e8e6bc049043445ed14f1e7db0
https://doi.org/10.1016/j.diamond.2012.09.008
https://doi.org/10.1016/j.diamond.2012.09.008
Publikováno v:
Microelectronics Reliability. 52:1553-1558
The electromigration behaviour of Cu/SiCOH interconnects carrying unipolar pulsed current with long periods (i.e. 2, 16, 32 and 48 h) is presented in this study. Experimental observations suggest that the electromigration behaviour during void growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::700a33548deffb71ca9f4ac09db7c10f
https://doi.org/10.1016/j.microrel.2011.12.026
https://doi.org/10.1016/j.microrel.2011.12.026
Autor:
Qunliang Song, Tao Chen, Chee Mang Ng, Chang Ming Li, Guan Hong Guai, Zhisong Lu, Chunxian Guo
Publikováno v:
Solar Energy. 86:2041-2048
A graphene- Pt ⧹ ITO (ITO-PG) counter electrode is fabricated by electrochemical deposition of a porous graphene film on a low-loaded Pt ⧹ ITO electrode. Compared to both plain graphene and Pt films, the graphene-coated Pt composite film provides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1232569bace096a81f37c6c3288412c7
https://doi.org/10.1016/j.solener.2012.04.006
https://doi.org/10.1016/j.solener.2012.04.006
Orientation control of epitaxial Ge thin films growth on SrTiO3 (100) by ultrahigh vacuum sputtering
Autor:
Chee Mang Ng, Jianwei Chai, Ming Yang, Ten It Wong, Shijie Wang, Wensheng Deng, Yuan Ping Feng, Anyan Du
Publikováno v:
Thin Solid Films. 520:4880-4883
We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO 3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b3485ec7acd618638ee126d6d0cd3c
https://doi.org/10.1016/j.tsf.2012.03.037
https://doi.org/10.1016/j.tsf.2012.03.037
Publikováno v:
Advanced Energy Materials. 2:334-338
A low-cost, sulfur-doped NiO (S–NiO) thin film is electrodeposited on fluorine-doped SnO2 substrate and studied in an iodide-based redox system. High electrochemical activity is present because of a large catalytic surface area and a low charge tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edceb0c43867e53b70eb8e05944c7229
https://doi.org/10.1002/aenm.201100582
https://doi.org/10.1002/aenm.201100582
Publikováno v:
IEEE Transactions on Electron Devices. 58:3852-3862
Tellurium (Te) implantation was introduced to tune the effective electron Schottky barrier height (SBH) ΦBn of platinum-based silicide (PtSi) contacts formed on n-type silicon-carbon (Si:C). Te introduced by ion implantation prior to Pt deposition s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1511729051462bc83961277ec81bfd
https://doi.org/10.1109/ted.2011.2166077
https://doi.org/10.1109/ted.2011.2166077
Publikováno v:
Nanoscience and Nanotechnology Letters. 3:186-190
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff71dbe180e4015011cab05470a7ba9
https://doi.org/10.1166/nnl.2011.1144
https://doi.org/10.1166/nnl.2011.1144