Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chee Boon Jiew"'
Publikováno v:
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.
In this paper, optimization and physical scaling of the SONOS ONO triple layer are extensively evaluated, with detailed characterization of the Flash cell behavior. Reliability tests have demonstrated high temperature endurance and long-term data ret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb0534be4b7053f8b6d9f3981ec94ab
https://doi.org/10.1109/nvmts.2013.6632849
https://doi.org/10.1109/nvmts.2013.6632849
Publikováno v:
2011 3rd Asia Symposium on Quality Electronic Design (ASQED).
An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13µm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16e28b89dc66af2bf2ce95c1e19608d
https://doi.org/10.1109/asqed.2011.6111763
https://doi.org/10.1109/asqed.2011.6111763
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
Experimental condition of thin SAB Oxide around 350Aring coupling with 400Aring Contact SiON film has exhibited the worst data retention behavior in One Time Programmable (OTP) & Multiple Time Programmable (MTP) memory device. Another alternative sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e225e51abe1ca3c2ac3c06fa3ef16fa5
https://doi.org/10.1109/smelec.2008.4770346
https://doi.org/10.1109/smelec.2008.4770346
Publikováno v:
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings; 2012, p1-6, 6p
Publikováno v:
2011 3rd Asia Symposium on Quality Electronic Design (ASQED); 2011, p292-295, 4p
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics; 2008, p383-387, 5p