Zobrazeno 1 - 10
of 464
pro vyhledávání: '"Checoury, A."'
Autor:
Girin, H., Bittner, S., Checoury, X., Decanini, D., Dietz, B., Grigis, A., Lafargue, C., Zyss, J., Xu, C., Sebbah, P., Lebental, M.
Classical and wave properties of microlasers with the shape of a truncated pseudosphere are investigated through experiments and numerical simulations. These pseudosphere microlasers are surface-like organic microlasers with constant negative curvatu
Externí odkaz:
http://arxiv.org/abs/2410.07034
High efficiency coupling of free electrons to sub-$\lambda^3$ modal volume, high-Q photonic cavities
Autor:
Bézard, Malo, Mohand, Imène Si Hadj, Ruggierio, Luigi, Roux, Arthur Le, Auad, Yves, Baroux, Paul, Tizei, Luiz H. G., Chécoury, Xavier, Kociak, Mathieu
We report on the design, realization and experimental investigation by spatially resolved monochromated electron energy loss spectroscopy (EELS) of high quality factor cavities with modal volumes smaller than $\lambda^3$, with $\lambda$ the free-spac
Externí odkaz:
http://arxiv.org/abs/2307.15556
Autor:
Elbaz, Anas, Arefin, Riazul, Sakat, Emilie, Wang, Binbin, Herth, Etienne, Patriarche, Gilles, Foti, Antonino, Ossikovski, Razvigor, Sauvage, Sebastien, Checoury, Xavier, Pantzas, Konstantinos, Sagnes, Isabelle, Chrétien, Jérémie, Casiez, Lara, Bertrand, Mathieu, Calvo, Vincent, Pauc, Nicolas, Chelnokov, Alexei, Boucaud, Philippe, Boeuf, Frederic, Reboud, Vincent, Hartmann, Jean-Michel, Kurdi, Moustafa El
Publikováno v:
ACS Photonics 2020, 7, 10, 2713-2722
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru
Externí odkaz:
http://arxiv.org/abs/2012.11262
Autor:
Song, Yalei, Monceaux, Yann, Bittner, Stefan, Chao, Kimhong, de la Cruz, Héctor M. Reynoso, Lafargue, Clément, Decanini, Dominique, Dietz, Barbara, Zyss, Joseph, Grigis, Alain, Checoury, Xavier, Lebental, Melanie
Publikováno v:
Phys. Rev. Lett. 127, 203901 (2021)
We report on experiments with M\"obius strip microlasers which were fabricated with high optical quality by direct laser writing. A M\"obius strip, i.e., a band with a half twist, exhibits the fascinating property that it has a single nonorientable s
Externí odkaz:
http://arxiv.org/abs/2011.12088
Autor:
Tabataba-Vakili, Farsane, Alloing, Blandine, Damilano, Benjamin, Souissi, Hassen, Brimont, Christelle, Doyennette, Laetitia, Guillet, Thierry, Checoury, Xavier, Kurdi, Moustafa El, Chenot, Sébastien, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Opt. Lett. 45, 4276-4279 (2020)
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide te
Externí odkaz:
http://arxiv.org/abs/2006.13800
Autor:
Elbaz, A., Buca, D., Driesch, N. Von den, Pantzas, K., Patriarche, G., Zerounian, N., Herth, E., Checoury, X., Sauvage, S., Sagnes, I., Foti, A., Ossikovski, R., Hartmann, J. -M., Boeuf, F., Ikonic, Z., Boucaud, P., Grutzmacher, D., Kurdi, M. El
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed f
Externí odkaz:
http://arxiv.org/abs/2001.04927
Autor:
Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Checoury, Xavier, Sauvage, Sébastien, Kurdi, Moustafa El, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Sci Rep 9, 18095 (2019)
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-
Externí odkaz:
http://arxiv.org/abs/1910.09236
Autor:
Tabataba-Vakili, Farsane, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Paulillo, Bruno, Colombelli, Raffaele, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Opt. Express 27, 11800-11808 (2019)
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silico
Externí odkaz:
http://arxiv.org/abs/1904.03101
Autor:
Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Frayssinet, Eric, Damilano, Benjamin, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
ACS Photonics 2018, 5, 3643-3648
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonst
Externí odkaz:
http://arxiv.org/abs/1904.03087
Autor:
Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, Kurdi, Moustafa El, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Appl. Phys. Lett. 111, 131103 (2017)
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantu
Externí odkaz:
http://arxiv.org/abs/1904.03055