Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Che-Hua Hsu"'
Autor:
Che-Hua Hsu, 許哲華
94
The negative pressure animal house is built to biosafety standards. It provides the environment for infected animal experiments and unsure the degree of influence confirmed infected animal experiments environment of the influence degree (such
The negative pressure animal house is built to biosafety standards. It provides the environment for infected animal experiments and unsure the degree of influence confirmed infected animal experiments environment of the influence degree (such
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53577601912567243148
Publikováno v:
Journal of Electronic Materials. 41:1936-1940
This work demonstrates the valence band-edge effective work function (φm,eff) of a titanium nitride (TiN) gate with a hafnium oxide (HfO2) dielectric using a cost-effective, low-complexity gate-first integration scheme. Aluminum (Al) ion implantatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb5790f700bd32ab220753f452599a0
https://doi.org/10.1007/s11664-012-1957-1
https://doi.org/10.1007/s11664-012-1957-1
Autor:
Wen-Kuan Yeh, Fon-Shan Huang, Che-Hua Hsu, Guo-Wei Huang, Kun-Ming Chen, Cheng-Li Lin, Yi-Wen Chen, Yu-Ting Chen, Chien-Ming Lai
Publikováno v:
IEEE Transactions on Electron Devices. 58:812-818
The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-κ/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5aca90ccb0f73553175a9de0e5dbe19
https://doi.org/10.1109/ted.2010.2101606
https://doi.org/10.1109/ted.2010.2101606
Autor:
Wen-Kuan Yeh, Hui Chen Chang, Liang Wei Chen, Cheng Tzung Tsai, M. Ma, Chien-Ting Lin, Che Hua Hsu, Yean-Kuen Fang, Ming Hing Chen, Tung Hsing Lee
Publikováno v:
Japanese Journal of Applied Physics. 45:3049-3052
The interactions of shallow trench isolation (STI) stress and various mobility enhancement approaches in silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) have been systematically studied. Strong interactions between STI stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6495e660d5964a411ac4719b8f20c4
https://doi.org/10.1143/jjap.45.3049
https://doi.org/10.1143/jjap.45.3049
Autor:
Chih-Wei Yang, Chien Ming Lai, San Lein Wu, Che Hua Hsu, Bo Chin Wang, Shih Chang Tsai, Po Chin Huang, Jone F. Chen, Chia-Wei Hsu, Osbert Cheng, Shoou-Jinn Chang
Publikováno v:
IEEE Electron Device Letters. 34:834-836
In this letter, the effect of adding ZrO2 to different positions in an HfO2-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metal-gate technology w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c77105cb92d43afe01d9034a102f52
https://doi.org/10.1109/led.2013.2261858
https://doi.org/10.1109/led.2013.2261858
Autor:
Che Hua Hsu, Bo Chin Wang, Shoou-Jinn Chang, Cheng Guo Chen, Po Chin Huang, Jone F. Chen, Osbert Cheng, Shih Chang Tsai, San Lein Wu, Yu Ying Lu, Chih-Wei Yang
Publikováno v:
IEEE Electron Device Letters. 34:151-153
Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO2/SiO2 and HfO2/SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO2 devices, as compared with that in HfO2 devices, is attributed to the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d54a15e2e41d8e94fbf17d9a2703a35
https://doi.org/10.1109/led.2012.2226698
https://doi.org/10.1109/led.2012.2226698
Autor:
Wen-Kuan Yeh, Chien-Ming Lai, Yi-Ping Huang, Wenqi Zhang, Chia-Wei Hsu, Chien-Ting Lin, Che-Hua Hsu, Chi-Yun Cheng, Yi-Lin Yang, Pin-Tseng Chen, Li-Kong Chin
Publikováno v:
IEEE Electron Device Letters. 33:1183-1185
In this letter, performance and reliability of high-k/metal gate MOSFETs can be effectively improved using post metallization annealing. Both oxygen and nitrogen were shown to diffuse into a high-k/SiO2 interfacial layer to suppress the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ec613e5697287fdc1f4ca7850d2cbc
https://doi.org/10.1109/led.2012.2202089
https://doi.org/10.1109/led.2012.2202089
Autor:
Jone-Fang Chen, Bo Chin Wang, Cheng-Guo Chen, Yu-Ying Lu, Che-Hua Hsu, Po Chin Huang, Shih-Chang Tsai, Chih-Wei Yang, San-Lein Wu, Shoou-Jinn Chang, Sheng-Po Chang, Osbert Cheng
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4946cacf457e7ed45c613c89479cffc
https://doi.org/10.7567/ssdm.2014.ps-3-10
https://doi.org/10.7567/ssdm.2014.ps-3-10
Autor:
Li-Wei Cheng, Che-Hua Hsu, Chien-Ting Lin, Chun-Yu Chen, Chia-Wei Hsu, Yean-Kuen Fang, Chien-Ming Lai, Wen-Kuan Yeh
Publikováno v:
IEEE Electron Device Letters. 30:781-783
In this letter, the effect of nitrogen incorporation in a Gd cap layer on the reliability of Hf-based high- k/metal-gate nMOSFETs is investigated in detail. NH3 post plasma treatment was implemented after deposition of the Hf-silicate (HfO2 or HfSiOx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eea92ade705fe5ff0d94d762f32c2ac1
https://doi.org/10.1109/led.2009.2022773
https://doi.org/10.1109/led.2009.2022773
Autor:
Wen-Kuan Yeh, Li Wei Cheng, Che Hua Hsu, Chia-Wei Hsu, Yean-Kuen Fang, Chien-Ting Lin, Chieh Ming Lai, M. Ma
Publikováno v:
Thin Solid Films. 516:7741-7743
A fully silicided (FUSI) metal gate process is merged with ultimate spacer process (USP) strain engineering to effectively enhance the performances of deep nano complementary metal oxide semiconductor field effect transistor (CMOSFET). Using the merg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323f85e54f7d25a79bc455c9524cc1b7
https://doi.org/10.1016/j.tsf.2008.04.064
https://doi.org/10.1016/j.tsf.2008.04.064