Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Che-Chi Hsu"'
Autor:
Che-Chi Hsu, 許哲綺
100
Recently, with the progress of science and technology, non-volatile memory''s demand quantity has not only increased but also its high efficiency becomes a requirement. At present, due to semiconductor technology advancement, device size is
Recently, with the progress of science and technology, non-volatile memory''s demand quantity has not only increased but also its high efficiency becomes a requirement. At present, due to semiconductor technology advancement, device size is
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/70567293410053762840
Autor:
Wen Luh Yang, Yu-Ping Hsiao, Cheng-Lin Peng, Che-Chi Hsu, Yun-Chung Yang, Yu-Hsien Lin, Yuan Ming Chang, Sheng-Hsien Liu, Li-Min Lin, Chin-Hsuan Liao, Fun-Tat Chin
Publikováno v:
ECS Transactions. 53:223-228
The sol-gel derived technique has been proposed not only to tailor the microstructure of resistive layer but to control the amount of metal during device fabrication for resistive random access memory (ReRAM). Using the sol-gel derived technique can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1cccf95b47bcbfc315012fcd875d922
https://doi.org/10.1149/05303.0223ecst
https://doi.org/10.1149/05303.0223ecst
