Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Che Wei Tsao"'
Publikováno v:
ACM Transactions on Embedded Computing Systems. 21:1-21
In the big data era, a huge number of services has placed a fast-growing demand on the capacity of DRAM-based main memory. However, due to the high hardware cost and serious leakage power/energy consumption, the growth rate of DRAM capacity cannot me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdde2a9848edffb1e9e2cdc5cdabb2bf
https://doi.org/10.1145/3530876
https://doi.org/10.1145/3530876
Publikováno v:
South African Journal of Industrial Engineering. 34
Driven by the total cost of ownership, US–China trade and technology competition, and the COVID-19 pandemic, global supply chains are undergoing a major restructuring that will soon transform business and economics all over the world. Recently, sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9df52040f377ce7bd18fc9f801217c7
https://doi.org/10.7166/34-1-2699
https://doi.org/10.7166/34-1-2699
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:1286-1299
Due to the ever-growing demands of larger capacity of flash storage devices, various new manufacturing techniques have been proposed to provide high-density and large-capacity NAND flash devices. Among these new techniques, 3-D NAND flash is regarded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb0f373a0b8a44a137d0e8aa05049cf
https://doi.org/10.1109/tcad.2019.2912937
https://doi.org/10.1109/tcad.2019.2912937
Autor:
Yu-Ming Chang, Chien-Chung Ho, Che-Wei Tsao, Shu-Hsien Liao, Wei-Chen Wang, Tei-Wei Kuo, Yuan-Hao Chang
Publikováno v:
Proceedings of the 37th ACM/SIGAPP Symposium on Applied Computing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91db8b68f90b8dbe925657d06c0963e
https://doi.org/10.1145/3477314.3507088
https://doi.org/10.1145/3477314.3507088
Publikováno v:
2021 IEEE 10th Non-Volatile Memory Systems and Applications Symposium (NVMSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110813bc0e10f7623e59762651a6371b
https://doi.org/10.1109/nvmsa53655.2021.9628829
https://doi.org/10.1109/nvmsa53655.2021.9628829
Autor:
Xue Liu, Che-Wei Tsao, Yu-Chen Lin, Tei-Wei Kuo, Tse-Yuan Wang, Jian-Jia Chen, Yuan-Hao Chang
Publikováno v:
RACS
With the trend of 3D architecture and higher access rate, Phase Change Memory (PCM) storage devices face the overheating issue. This work is motivated by the observation that PCM devices might change states of memory cells with high temperature, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e574bf47711d109cca525060649a6665
https://doi.org/10.1145/3400286.3418248
https://doi.org/10.1145/3400286.3418248
Autor:
Che-Wei Tsao, Chun-Kong Law
Publikováno v:
Operators and Matrices. :363-373
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3039ac9b8fec7b3c920ddd5f8d983040
https://doi.org/10.7153/oam-2019-13-26
https://doi.org/10.7153/oam-2019-13-26
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:1518-1530
In the big data era, data-intensive applications have growing demand for the capacity of DRAM main memory, but the frequent DRAM refresh, high leakage power, and high unit cost bring serious design issues on scaling up DRAM capacity. To address this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2520563868e660db3b0793e4028cf108
https://doi.org/10.1109/tvlsi.2018.2819210
https://doi.org/10.1109/tvlsi.2018.2819210
Publikováno v:
SID Symposium Digest of Technical Papers. 49:823-826
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2aa708405d145794741e0d606abc7cd
https://doi.org/10.1002/sdtp.12280
https://doi.org/10.1002/sdtp.12280
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 35:1425-1434
The high cell density, multilevel-cell programming, and manufacturing process variance force the new coming flash memory to have large bit-error-rate variance among blocks and pages, where a flash chip consists of multiple blocks and each block consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e52c8ba5f4a3c949795357608fcb60
https://doi.org/10.1109/tcad.2015.2512902
https://doi.org/10.1109/tcad.2015.2512902