Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Che Mofor, A."'
Publikováno v:
In Superlattices and Microstructures 2007 42(1):33-39
Publikováno v:
In Superlattices and Microstructures 2007 42(1):158-164
Publikováno v:
In Superlattices and Microstructures 2007 42(1):129-133
Autor:
Che Mofor, A., El-Shaer, A., Bakin, A., Wehmann, H.-H., Ahlers, H., Siegner, U., Sievers, S., Albrecht, M., Schoch, W., Izyumskaya, N., Avrutin, V., Stoemenos, J., Waag, A.
Publikováno v:
In Superlattices and Microstructures 2006 39(1):381-386
Publikováno v:
Superlattices and Microstructures. 42:158-164
Layer by layer growth of ZnO epilayers on (0001) Al2O3 substrates is achieved by radical-source molecular beam epitaxy. A thin MgO buffer, followed by a low-temperature ZnO buffer was used in order to accommodate the lattice mismatch between ZnO and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67865efd2bb908126159b8ca0099ad99
https://doi.org/10.1016/j.spmi.2007.04.064
https://doi.org/10.1016/j.spmi.2007.04.064
Publikováno v:
Superlattices and Microstructures. 42:129-133
Wurtzite structure ZnMgO layers have been grown using radical-source molecular beam epitaxy on high-quality ZnO buffer layers grown on (0001) sapphire substrates. The thickness of the ZnO buffer layers is 300 nm, with full width at half maxim of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151fc1b2c8498f5dbd02ad82815c6442
https://doi.org/10.1016/j.spmi.2007.04.063
https://doi.org/10.1016/j.spmi.2007.04.063
Publikováno v:
Superlattices and Microstructures. 42:33-39
We have developed a novel advanced VPT set-up. ZnO layers and nanorods were grown employing a specially designed horizontal vapour transport system with elemental sources at relatively low temperatures without catalysis. We employed 6N elemental Zn c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c7e7a2c594d39df1987363a0ac1fa2
https://doi.org/10.1016/j.spmi.2007.04.067
https://doi.org/10.1016/j.spmi.2007.04.067
Autor:
M. Kreye, A. Che Mofor, Andreas Waag, A. El Shaer, Alois Krost, J. Stoimenos, Andrey Bakin, Béla Pécz, Jürgen Bläsing
Publikováno v:
Applied Physics A. 88:57-60
We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81217c1ae3549094e35968ed8dc9d90
https://doi.org/10.1007/s00339-007-3959-z
https://doi.org/10.1007/s00339-007-3959-z
Autor:
V. G. Beshenkov, Hadis Morkoç, N. Izyumskaya, Andrey Bakin, V. Avrutin, Ümit Özgür, F. Reuss, A.N. Pustovit, Hosun Lee, A. Che Mofor, Andreas Waag, Wladimir Schoch, Abdelhamid El-Shaer
Publikováno v:
Superlattices and Microstructures. 39:291-298
We studied the structural and electronic properties of Zn1−xMnxO ( 0 x 0.5 ) layers grown by peroxide molecular beam epitaxy. Hall effect measurements showed that the layers were highly resistive, pointing to strong electrical compensation of the Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f9a6d0b612d41add17633c2eb930d8
https://doi.org/10.1016/j.spmi.2005.08.051
https://doi.org/10.1016/j.spmi.2005.08.051
Autor:
Andrey Bakin, M. Kreye, A. Che Mofor, Juergen Christen, Abdelhamid El-Shaer, J. Stoimenos, Frank Bertram, Andreas Waag, Michael Heuken
Publikováno v:
Journal of Crystal Growth. 287:7-11
The growth of ZnO epitaxial layers by using molecular beam epitaxy (MBE) is presented in this paper. We employed a modified Varian Gen II MBE system using H2O2 as an oxidant. ZnO layers with thickness from 100 to 600 nm were grown on (0 0 0 1)-sapphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655f1fb8b85b0b0efad30ffe2486ceb3
https://doi.org/10.1016/j.jcrysgro.2005.10.033
https://doi.org/10.1016/j.jcrysgro.2005.10.033