Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Chayanika Bose"'
Autor:
Banibrata Bag, Akinchan Das, Imran Shafique Ansari, Ales Prokes, Chayanika Bose, Aniruddha Chandra
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 3, Pp 1-17 (2018)
Free-space optical (FSO) links are considered as cost-effective, noninvasive alternative to fiber optic cables for 5G cellular backhaul networking. For FSO-based backhaul networks, we propose an additional millimeter-wavelength (MMW) radio-frequency
Externí odkaz:
https://doaj.org/article/053bda4c537849f2887167b1ad436e80
Autor:
Chaitali Chakraborty, Chayanika Bose
Publikováno v:
Journal of Advanced Dielectrics, Vol 6, Iss 1, Pp 1650001-1-1650001-5 (2016)
The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication. The size and position of the NCs a
Externí odkaz:
https://doaj.org/article/fef44ddcc3d34bca9d6352a11cc06c2c
Autor:
Madhupriya Samanta, Shrabani Ghosh, Moumita Mukherjee, Biswajit Das, Chayanika Bose, Kalyan K. Chattopadhyay
Publikováno v:
International Journal of Hydrogen Energy. 47:6710-6720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe345f657f721e7a715d73e4ef56e861
https://doi.org/10.1016/j.ijhydene.2021.12.067
https://doi.org/10.1016/j.ijhydene.2021.12.067
Publikováno v:
Silicon. 14:7157-7168
The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An analytical model is developed to evaluate its performance. The device is also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aaaade95d8fa12b3619f4c5cf5a85ed
https://doi.org/10.1007/s12633-021-01483-9
https://doi.org/10.1007/s12633-021-01483-9
Publikováno v:
Silicon. 13:375-387
This paper presents an analytical modeling of a separated gate underlap graded N-channel FET to assess the short-channel effects. A 2D modeling scheme is employed to derive its surface potential, threshold voltage, subthreshold current and DIBL. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0525128d6dccb8e29ab8aed638ff2dea
https://doi.org/10.1007/s12633-020-00424-2
https://doi.org/10.1007/s12633-020-00424-2
Publikováno v:
Journal of Computational Electronics. 19:688-699
The graded n-channel underlap fin-shaped field-effect transistor (FinFET) provides ample scope for future investigation. This device and the effects of the underlap, gate length, and doping concentration of the short channel are analyzed herein using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4381787a84af0feafc346b9029a2c2f
https://doi.org/10.1007/s10825-020-01458-w
https://doi.org/10.1007/s10825-020-01458-w
Publikováno v:
IET Circuits, Devices & Systems. 13:337-343
Double-gate MOSFET with graded channel doping is studied in this work, where the source and drain ends of the channel are doped with different concentrations to yield two different versions of the above device namely high-low (HL) and low-high (LH).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24ea975911f8b06666ec3aa04889cbab
https://doi.org/10.1049/iet-cds.2018.5199
https://doi.org/10.1049/iet-cds.2018.5199
Publikováno v:
2021 Devices for Integrated Circuit (DevIC).
The present paper describes the influence of Gate stacking on Dual Material (DM) Junctionless (JL) SOI MOSFET operating in Junction Accumulation Mode(JAM). The performance of the proposed MOSFET structure, simulated with 2D ATLAS device simulator, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e25ad97fff47a393fa6329b777e3bd
https://doi.org/10.1109/devic50843.2021.9455802
https://doi.org/10.1109/devic50843.2021.9455802
Publikováno v:
VTC Spring
In this paper, we have analyzed the average bit error rate (ABER) performance of a multiple-input-multiple-output (MIMO) free-space optical (FSO) communication link employing both transmitter and receiver diversity techniques. For the proposed MIMO F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d752bea00aea13fd9af023d3e16d565
https://doi.org/10.1109/vtc2021-spring51267.2021.9448836
https://doi.org/10.1109/vtc2021-spring51267.2021.9448836
Publikováno v:
VTC Spring
The WiGig Alliance has recently introduced IEEE 802.11ay that standardizes the use of 60 GHz millimeter-wave (mmWave) frequency band for providing Gbps wireless connectivity on the move. However, for vehicle-to-infrastructure (V2I) systems using such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::372bc287f310aa04428289345c52b4d6
https://doi.org/10.1109/vtc2021-spring51267.2021.9448835
https://doi.org/10.1109/vtc2021-spring51267.2021.9448835