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Autor:
Specht, Petra, Luysberg, Martina, Chavez1, J., Weatherford, T.R., Anderson, T.J., Koehler, A.D., Kisielowski, C.
The article of record as published may be found at https://doi.org/10.1017/S1431927618010346 Group III – nitride materials are already used in multiple high speed transistor applications as well as in opto-electronics, from light emitting diodes to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2778::be337aacd2dab07536153c4ae8b83897
https://hdl.handle.net/10945/60685
https://hdl.handle.net/10945/60685
