Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Chauvat, M.P."'
Autor:
Rahali, R., Lebius, H., Benyagoub, A., Gardes, E., Guillous, S., Monnet, I., Sall, M., Chauvat, M.P., Marie, D., Grygiel, C.
Publikováno v:
In Materialia March 2023 27
Publikováno v:
In Applied Surface Science 1 February 2020 502
Akademický článek
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Autor:
Lahourcade, L., Renard, J., Kandaswamy, P.K., Gayral, B., Chauvat, M.P., Ruterana, P., Monroy, E.
Publikováno v:
In Microelectronics Journal February 2009 40(2):325-327
Autor:
Chery, Nicolas, Ngo, Thi Huong, Chauvat, M.P., Damilano, B., Courville, A, Ruterana, Pierre, Gil, Bernard, de Mierry, P., Grieb, Tim, Mehrtens, Thorsten, Krause, Florian, Müller-Caspary, Knut, Schowalter, Marco, Rosenauer, Andreas
Publikováno v:
Journal of Microscopy
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi-Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi-Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
In this work, we analyse the microstructure and local chemical composition of green-emitting InxGa1-xN/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::86765e745608b64df2eb95fc831aad35
https://hal.science/hal-01691523
https://hal.science/hal-01691523
We have applied our previous method of self-consistent k*-factors for absorption correction in energy-dispersive X-ray spectroscopy to quantify the indium content in X-ray maps of thick compound InGaN layers. The method allows us to quantify the indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::06c71bbefe76cd51c1a02fb7c0074f8a
Akademický článek
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Autor:
CHERY, N., NGO, T.H., CHAUVAT, M.P., DAMILANO, B., COURVILLE, A., DE MIERRY, P., GRIEB, T., MEHRTENS, T., KRAUSE, F.F., MÜLLER‐CASPARY, K., SCHOWALTER, M., GIL, B., ROSENAUER, A., RUTERANA, P.
Publikováno v:
Journal of Microscopy; Dec2017, Vol. 268 Issue 3, p305-312, 8p
Publikováno v:
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::184a7b88b1b7f7a3ad6d9f1c5ea6b36a
https://hal.archives-ouvertes.fr/hal-00807156
https://hal.archives-ouvertes.fr/hal-00807156
Autor:
Olivier, O., Wichmann, N., Mo, J.J., Noudeviwa, A., Roelens, Y., Desplanque, L., Wallart, X., Danneville, F., Dambrine, G., Martin, F., Desplats, O., Wang, Y., Chauvat, M.P., Ruterana, P., Maher, H., Saint-Martin, J., Shi, Minghua, Bollaert, S.
Publikováno v:
Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
International audience; In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3189972bbabd0fdf209909d05da4a17e
https://hal.science/hal-00549921
https://hal.science/hal-00549921