Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Chauvat, M. P."'
Autor:
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Publikováno v:
Journal of Applied Physics; 6/28/2024, Vol. 135 Issue 24, p1-8, 8p
Autor:
Khomenkova, L., Merabet, H., Chauvat, M.-P., Frilay, C., Portier, X., Labbe, C., Marie, P., Cardin, J., Boudin, S., Rueff, J.-M., Gourbilleau, F.
Publikováno v:
In Surfaces and Interfaces November 2022 34
Autor:
Valdueza-Felip, S., Ajay, A., Redaelli, L., Chauvat, M. P., Ruterana, P., Cremel, T., Jiménez-Rodríguez, M., Kheng, K., Monroy, E.
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated
Externí odkaz:
http://arxiv.org/abs/1610.07413
Autor:
Valdueza-Felip, S., Bellet-Amalric, E., Núñez-Cascajero, A., Wang, Y., Chauvat, M. -P., Ruterana, P., Pouget, S., Lorenz, K., Alves, E., Monroy, E.
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological qual
Externí odkaz:
http://arxiv.org/abs/1410.5659
Autor:
Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.
Publikováno v:
Journal of Applied Physics; 7/21/2022, Vol. 132 Issue 3, p1-8, 8p
Autor:
Lorenz, K., Wendler, E., Redondo-Cubero, A., Catarino, N., Chauvat, M.-P., Schwaiger, S., Scholz, F., Alves, E., Ruterana, P.
Publikováno v:
In Acta Materialia 15 January 2017 123:177-187
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
Autor:
Skuridina, D., Dinh, D.V., Pristovsek, M., Lacroix, B., Chauvat, M.-P., Ruterana, P., Kneissl, M., Vogt, P.
Publikováno v:
In Applied Surface Science 15 July 2014 307:461-467
Autor:
Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M. P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., Kuzmík, J.
Publikováno v:
Journal of Applied Physics; 2019, Vol. 125 Issue 10, pN.PAG-N.PAG, 10p, 2 Color Photographs, 3 Black and White Photographs, 2 Diagrams, 5 Graphs
Autor:
Machhadani, Houssaine, Beeler, M, Sakr, S, Warde, E, Kotsar, Y, Tchernycheva, M, Chauvat, M P., Ruterana, P, Nataf, G, De Mierry, Ph, Monroy, E, Julien, F H.
We report on the observation of intersubband absorption in GaN/AlN quantum well superlattices grown on (112)-oriented GaN. The absorption is tuned in the 1.5–4.5 μm wavelength range by adjusting the well thickness. The semipolar samples are compar
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-93977
Autor:
Khomenkova, L., Chauvat, M.-P., Marie, P., Frilay, C., Lemarié, F., Boudin, S., Portier, X., Ratel-Ramond, N., Labbé, C., Cardin, J., Gourbilleau, F.
Publikováno v:
In Materials Letters 15 March 2020 263