Zobrazeno 1 - 10
of 608
pro vyhledávání: '"Chaussende, D"'
Autor:
Pedesseau, L., Chaix-Pluchery, O., Modreanu, M., Chaussende, D., Sarigiannidou, E., Rolland, A., Even, J., Durand, O.
Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high tempe
Externí odkaz:
http://arxiv.org/abs/1612.05575
Publikováno v:
APL Mater. 3, 121101 (2015)
New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the Born charges
Externí odkaz:
http://arxiv.org/abs/1507.06735
Publikováno v:
Optics letters [Opt Lett] 2024 Aug 01; Vol. 49 (15), pp. 4389-4392.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Shi, L., Ouisse, T., Sarigiannidou, E., Chaix-Pluchery, O., Roussel, H., Chaussende, D., Hackens, B.
Publikováno v:
In Acta Materialia 15 January 2015 83:304-309
Publikováno v:
Kollmuß, M, Köhler, J, Ou, H, Fan, W, Chaussende, D, Hock, R & Wellmann, P J 2022, ' Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications ', Materials Science Forum, vol. 1062, pp. 119-124 . https://doi.org/10.4028/p-nshb40
3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1202::05dbaaa68ba76b633403b33733e09828
https://orbit.dtu.dk/en/publications/ecba6ce3-c2bd-493c-9335-549c13379286
https://orbit.dtu.dk/en/publications/ecba6ce3-c2bd-493c-9335-549c13379286
3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::2fe9e661354a2ba68f1bce2a62c8a678
https://zenodo.org/record/7640589
https://zenodo.org/record/7640589
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 August 2012 284:19-22
DESIGN OF A COIL FOR ELECTROMAGNETIC LEVITATION: COMPARISON OF NUMERICAL MODELS AND COIL REALIZATION
The idea of optimization of electromagnetic coil for levitation under terrestrial conditions using analytical approach or numerical simulations seems attractive, yet, formulation of such problem is not straightforward. As a first step toward it, anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______166::8d921ca06056eb9abdeb17f30d97c4c1
https://hal.archives-ouvertes.fr/hal-03739247
https://hal.archives-ouvertes.fr/hal-03739247
Autor:
Claudel, A., Blanquet, E., Chaussende, D., Boichot, R., Doisneau, B., Berthomé, G., Crisci, A., Mank, H., Moisson, C., Pique, D., Pons, M.
Publikováno v:
In Journal of Crystal Growth 2011 335(1):17-24