Zobrazeno 1 - 10
of 315
pro vyhledávání: '"Chaste P"'
Autor:
Florence L. Pulido, Richelle Faith D. Cayabyab, Allura Xandra M. Adversalo, Alyssa V. Baylon, Aubrey N. Centeno, Aea Jainey G. Dizon, Marc Andrei L. Formoso, Alexis Angel P. Hernando, Eric Jon Luis B. Jucutan, Justine Anthonell G. Maltu, Daniel Joy R. Pia, Chaste Priel T. Sally, Angeline Ysabelle R. Tulagan
Publikováno v:
Journal of Healthcare Administration, Vol 2, Iss 2 (2023)
Background: The shift to online learning during the COVID-19 pandemic has raised concerns and heightened anxiety levels, especially among student nurses adapting to academic and clinical challenges. Objective: This study aimed to assess the anxiety
Externí odkaz:
https://doaj.org/article/912cac3e19fa435489fb279e093d549c
Autor:
Mahmoudi, Aymen, Bouaziz, Meryem, Romani, Davide, Pala, Marco, Thieffry, Aurelien, Brule, Thibault, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim
The stacking order of two-dimensional transition metal dichalcogenides (TMDs) is attracting tremendous interest as an essential component of van der Waals heterostructures. A common and fast approach to distinguish between the AAprime (2H) and AB (3R
Externí odkaz:
http://arxiv.org/abs/2409.08617
Autor:
Chiout, Anis, Tempez, Agnès, Carlier, Thomas, Chaigneau, Marc, Cadiz, Fabian, Rowe, Alistair, Zheng, Biyuan, Pan, Anlian, Pala, Marco, Oehler, Fabrice, Ouerghi, Abdelkarim, Chaste, Julien
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical
Externí odkaz:
http://arxiv.org/abs/2402.03061
Autor:
Mahmoudi, Aymen, Bouaziz, Meryem, Chapuis, Niels, Kremer, Geoffroy, Chaste, Julien, Romanin, Davide, Pala, Marco, Bertran, François, Fèvre, Patrick Le, Gerber, Iann C., Patriarche, Gilles, Oehler, Fabrice, Wallart, Xavier, Ouerghi, Abdelkarim
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of
Externí odkaz:
http://arxiv.org/abs/2310.05660
Autor:
Bouaziz, Meryem, Mahmoudi, Aymen, Kremer, Geoffroy, Chaste, Julien, Gonzalez, Cesar, Dappe, Yannick J., Bertran, Francois, Fevre, Patrick Le, Pala, Marco, Oehler, Fabrice, Girard, Jean-Christophe, Ouerghi, Abdelkarim
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in
Externí odkaz:
http://arxiv.org/abs/2308.08975
Autor:
Kremer, Geoffroy, Mahmoudi, Aymen, M'Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Fèvre, Patrick Le, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention due to it
Externí odkaz:
http://arxiv.org/abs/2308.04864
Autor:
Zribi, Jihene, Pierucci, Debora, Bisti, Federico, Zheng, Biyuan, Avila, Josse, Khalil, Lama, Ernandes, Cyrine, Chaste, Julien, Oehler, Fabrice, Pala, Marco, Maroutian, Thomas, Hermes, Ilka, Lhuillier, Emmanuel, Pan, Anlian, Ouerghi, Abdelkarim
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential devic
Externí odkaz:
http://arxiv.org/abs/2212.03248
Autor:
Salazar, Raphaël, Varotto, Sara, Vergnaud, Céline, Garcia, Vincent, Fusil, Stéphane, Chaste, Julien, Maroutian, Thomas, Marty, Alain, Bonell, Frédéric, Pierucci, Debora, Ouerghi, Abdelkarim, Bertran, François, Fèvre, Patrick Le, Jamet, Matthieu, Bibes, Manuel, Rault, Julien
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorpo
Externí odkaz:
http://arxiv.org/abs/2210.14786
Autor:
Román}, Ricardo Javier Peña, Pommier, Delphine, Bretel, Rémi, López, Luis E. Parra, Lorchat, Etienne, Chaste, Julien, Ouerghi, Abdelkarim, Moal, Séverine Le, Boer-Duchemin, Elizabeth, Dujardin, Gérald, Borisov, Andrey G., Zagonel, Luiz F., Schull, Guillaume, Berciaud, Stéphane, Moal, Eric Le
Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectrosco
Externí odkaz:
http://arxiv.org/abs/2205.12789
Autor:
Khalil, Lama, Pierucci, Debora, Velez, Emilio, Avila, José, Vergnaud, Céline, Dudin, Pavel, Oehler, Fabrice, Chaste, Julien, Jamet, Matthieu, Lhuillier, Emmanuel, Pala, Marco, Ouerghi, Abdelkarim
Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the pr
Externí odkaz:
http://arxiv.org/abs/2201.03322