Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Chassagne, Thierry"'
Autor:
Khazaka, Rami, Grundmann, Marius, Portail, Marc, Vennéguès, Philippe, Zielinski, Marcin, Chassagne, Thierry, Alquier, Daniel, Michaud, Jean-François
Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/ Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A31228
https://ul.qucosa.de/api/qucosa%3A31228/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A31228/attachment/ATT-0/
Autor:
Cordier, Yvon, Frayssinet, Eric, Portail, Marc, Zielinski, Marcin, Chassagne, Thierry, Korytov, Maxim, Courville, Aimeric, Roy, Sébastien, Nemoz, Maud, Chmielowska, Magdalena, Vennéguès, Philippe, David Schenk, H.P., Kennard, Mark, Bavard, Alexis, Rondi, Daniel
Publikováno v:
In Journal of Crystal Growth 15 July 2014 398:23-32
Autor:
Cordier, Yvon, Portail, Marc, Chenot, Sébastien, Tottereau, Olivier, Zielinski, Marcin, Chassagne, Thierry
Publikováno v:
In Journal of Crystal Growth 2008 310(20):4417-4423
Autor:
Chassagne, Thierry *, Ferro, Gabriel, Chaussende, Didier, Cauwet, François, Monteil, Yves, Bouix, Jean
Publikováno v:
In Thin Solid Films 2002 402(1):83-89
Autor:
CONTRERAS, Sylvie, KONCZEWICZ, Leszek, Arvinte, Roxana, PEYRE, Herve, Chassagne, Thierry, Zielinski, Marcin, JUILLAGUET, Sandrine
Publikováno v:
Physica Statut Solidi A
E-MRS : Wide bandgap materials for electron devices
E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
E-MRS : Wide bandgap materials for electron devices
E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
International audience; The Hall hole density pH and Hall mobility µH in highly aluminum-doped 4H-SiC have been investi-gated in the wide temperature range between 100 K and 900 K. After an overview of the literature data related to the analysis of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dca9b13cbc5ee301d54a882bb84254e9
https://hal.archives-ouvertes.fr/hal-01540938
https://hal.archives-ouvertes.fr/hal-01540938
Akademický článek
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Autor:
Michaud, Jean François, Zielinski, Marcin, Ben Messaoud, Jaweb, Chassagne, Thierry, Portail, Marc, Alquier, Daniel
Publikováno v:
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p318-321, 4p
Autor:
Zielinski, Marcin, Monnoye, Sylvain, Mank, Hugues, Moisson, Catherine, Chassagne, Thierry, Michon, Adrien, Portail, Marc
Publikováno v:
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p306-309, 4p
Autor:
Dagher, Roy, Jouault, Benoit, Paillet, Matthieu, Bayle, Maxime, Nguyen, Luan, Portail, Marc, Zielinski, Marcin, Chassagne, Thierry, Cordier, Yvon, Michon, Adrien
Publikováno v:
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p731-734, 4p
Autor:
Contreras, Sylvie, Konczewicz, Leszek, Arvinte, Roxana, Ben Messaoud, Jaweb, Wang, Tian Lin, Peyre, Hervé, Chassagne, Thierry, Zielinski, Marcin, Juillaguet, Sandrine
Publikováno v:
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p275-278, 4p