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pro vyhledávání: '"Chartier, Sébastien"'
Akademický článek
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This deliverable summarizes the research on D-band fabricated RFICs and their measurement results used in ARIADNE, as an output in the second project phase of work in Task 3.2. Packaging of the radio frequency signal generation chain in combination w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67f567c6d4116e96b10e2de351c7dbf4
Akademický článek
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An ultra low noise phase locked loop (PLL) for millimeter wave applications is presented. The complete design includes a mixer type phase detector, a divide-by-32 frequency divider, a VCO and an off-chip active low pass filter. A method for the phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::968ec8d883948752cbd0dd7050bf7431
Autor:
Chartier, Sébastien
The recent significant performance improvement of SiGe Heterojunction Bipolar Transistors has opened the way to the millimeter-wave domain. In the future, this will allow the development of new exciting consumer-oriented applications such as high-dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9834b8d8addfec3067cbdb28870c7f9
In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 and 90 GHz, respectively. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97e2bab4b2ab45b69a4f6c223a86e076
Autor:
Dederer, Jochen, Chartier, Sébastien, Feger, Till, Spitzberg, Ursula, Trasser, Andreas, Schumacher, Hermann
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32bf297faccae7700396cf7a74c6e6b3
The authors present three amplifiers, operating at 36, 40 and 50 GHz implemented in a low-cost 0.8 um Si/SiGe HBT technology which features an fT and fMAX of 80 GHz. Each amplifier shows a high gain, a high isolation and a good linearity. The high pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7feac863b31115f6623b10495dd9b02a