Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Charnas, Adam"'
Autor:
Lin, Zehao, Si, Mengwei, Askarpour, Vahid, Niu, Chang, Charnas, Adam, Shang, Zhongxia, Zhang, Yizhi, Hu, Yaoqiao, Zhang, Zhuocheng, Liao, Pai-Ying, Cho, Kyeongjae, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 tr
Externí odkaz:
http://arxiv.org/abs/2205.00357
Autor:
Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Noh, Jinhyun, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m
Externí odkaz:
http://arxiv.org/abs/2205.00360
Autor:
Li, Jian V., Hendricks, Jessica, Charnas, Adam, Noesges, Brenton A., Neal, Adam T., Asel, Thaddeus J., Kim, Yunjo, Mou, Shin
Publikováno v:
In Thin Solid Films 30 January 2024 789
Autor:
Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controll
Externí odkaz:
http://arxiv.org/abs/2012.12433
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (E
Externí odkaz:
http://arxiv.org/abs/2012.04789
Autor:
Qin, Jing-Kai, Liao, Pai-Ying, Si, Mengwei, Gao, Shiyuan, Qiu, Gang, Jian, Jie, Wang, Qingxiao, Zhang, Si-Qi, Huang, Shouyuan, Charnas, Adam, Wang, Yixiu, Kim, Moon J., Wu, Wenzhuo, Xu, Xianfan, Wang, Hai-Yan, Yang, Li, Yap, Yoke Khin, Ye, Peide D.
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few
Externí odkaz:
http://arxiv.org/abs/2001.05539
Autor:
Qin, Jingkai, Qiu, Gang, Jian, Jie, Zhou, Hong, Yang, Lingming, Charnas, Adam, Zemlyanov, Dmitry Y, Xu, Cheng-Yan, Xu, Xianfan, Wu, Wenzhuo, Wang, Haiyan, Ye, Peide D
Publikováno v:
ACS Nano, 2017, 11 (10), pp 10222
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hinder
Externí odkaz:
http://arxiv.org/abs/1711.00944
Akademický článek
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Autor:
Qiu, Gang, Du, Yuchen, Charnas, Adam, Zhou, Hong, Jin, Shengyu, Luo, Zhe, Zemlyanov, Dmitry, Xu, Xianfan, Cheng, Gary, Ye, Peide D.
Publikováno v:
Qiu, Gang, et al. "Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5." Nano Letters (2016)
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is that it is a 3D Dirac semimetal which has linear energy dispersion in
Externí odkaz:
http://arxiv.org/abs/1606.07960
Akademický článek
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