Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Charles-Alexandre Legrand"'
Autor:
A. Fleury, J. Azevedo Goncalves, I. Sicard, J. Uginet, C. Renard, Charles-Alexandre Legrand, E. Brezza, Nicolas Guitard, Frederic Paillardet, G. Bertrand, M.-L. Rellier, Raphael Paulin, Nathalie Vulliet, M. Buczko, Patrice Garcia, Y. Mourier, Olivier Kermarrec, L. Boissonnet, Cedric Durand, J. Borrel, Pascal Chevalier, D. Ney, Sebastien Cremer, Alexis Gauthier, N. Pelloux, Patrick Scheer, F. Foussadier, Frederic Monsieur, L. Garchery, J. Lajoinie, V. Milon, Didier Celi, E. Canderle, C. Diouf, Eric Granger, N. Derrier, Daniel Gloria, Andre Juge, D. Muller, Frederic Gianesello, A. Pallotta
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard. Although it is envisioned that 6G may bring an unprecedent transformation of the wireless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a34e8815f02575f307fe67f0ec7b291
https://doi.org/10.1109/iedm13553.2020.9371954
https://doi.org/10.1109/iedm13553.2020.9371954
Autor:
D. Marin-Cudraz, Charles-Alexandre Legrand, Jean-Daniel Lise, Johan Bourgeat, Philippe Galy, Nicolas Guitard
Publikováno v:
IEEE Transactions on Electron Devices. 64:3991-3997
The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge (ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with a dual back-to-back silicon-controlled rectifier (SCR) for bulk a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acaf1491a9567f1025742e9330afb319
https://doi.org/10.1109/ted.2017.2741524
https://doi.org/10.1109/ted.2017.2741524
Autor:
Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z 3 -FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4ade0a70d60cdc511cb1a1affe7908f
https://doi.org/10.1016/j.sse.2015.10.010
https://doi.org/10.1016/j.sse.2015.10.010
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (3), pp.916-922. ⟨10.1109/TED.2017.2651363⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (3), pp.916-922. ⟨10.1109/TED.2017.2651363⟩
Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ed34a30735496d67d7ed9ca5a62cb2d
https://hal.archives-ouvertes.fr/hal-02006376
https://hal.archives-ouvertes.fr/hal-02006376
Autor:
Sorin Cristoloveanu, Yohann Solaro, H. El Dirani, P. Ferrari, D. Marin-Cudraz, Charles-Alexandre Legrand, Dominique Golanski, Pascal Fonteneau
Publikováno v:
2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩
session 9: Advanced Devices ad Three-Dimensional Integration; International audience; A systematic study of a novel band modulation device (Z3-FET: Zero gate, Zero swing slope and Zero impact ionization) fabricated in most advanced Fully Depleted Sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ec7bbf904c8a6c8ea5ea92a089edf3e
https://hal.archives-ouvertes.fr/hal-02006226
https://hal.archives-ouvertes.fr/hal-02006226
Publikováno v:
2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.151-154, ⟨10.1109/ULIS.2016.7440075⟩
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.151-154, ⟨10.1109/ULIS.2016.7440075⟩
session 11: Advanced Devices; International audience; We propose a novel device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. Variable electrostatic doping (gate-induced) in diode and transistor body
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c47381e014c04a7ee3372b53b32c52e
https://hal.archives-ouvertes.fr/hal-02006258
https://hal.archives-ouvertes.fr/hal-02006258
Autor:
Yohann Solaro, Pascal Fonteneau, Claire Fenouillet-Beranger, D. Marin-Cudraz, Charles-Alexandre Legrand
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c9d1366878ed17b9cdb556bb54f264
https://doi.org/10.1109/eosesd.2015.7314808
https://doi.org/10.1109/eosesd.2015.7314808
Autor:
Yohann Solaro, Philippe Ferrari, Claire Fenouillet-Beranger, Sorin Cristoloveanu, D. Marin-Cudraz, Charles-Alexandre Legrand, Pascal Guyader, Pascal Fonteneau, Jeremy Passieux, L. Clement
Publikováno v:
International Electron Device meeting, IEDM 2013
International Electron Device meeting, IEDM 2013, Dec 2013, Washington DC, United States. pp.1-4
Techical Digest of the International Electron Devices Meeting 2013
IEDM 2013
IEDM 2013, Dec 2013, Washington, United States. pp.180-183, ⟨10.1109/IEDM.2013.6724580⟩
International Electron Device meeting, IEDM 2013, Dec 2013, Washington DC, United States. pp.1-4
Techical Digest of the International Electron Devices Meeting 2013
IEDM 2013
IEDM 2013, Dec 2013, Washington, United States. pp.180-183, ⟨10.1109/IEDM.2013.6724580⟩
We present an innovative set of UTBB (Ultra-Thin Body and BOX) ESD protection devices, which achieves remarkable performance in terms of leakage current and triggering control. Ultra-low leakage current below 0.1 pA/μm and adjustable triggering (1.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9924312fdeafad2cfce27fc026b20187
https://hal.science/hal-00994520
https://hal.science/hal-00994520
Autor:
Claire Fenouillet-Beranger, Philippe Ferrari, Sorin Cristoloveanu, Pascal Fonteneau, Charles-Alexandre Legrand, Yohann Solaro
Publikováno v:
ESSDERC
Proceedings of the 43rd European Solid-State Device Research Conference
43rd ESSDERC
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.222-225, ⟨10.1109/ESSDERC.2013.6818859⟩
43th European Solid State Device Research Conference, ESSDERC 2013
43th European Solid State Device Research Conference, ESSDERC 2013, Sep 2013, Bucarest, Romania. pp.1-4
Proceedings of the 43rd European Solid-State Device Research Conference
43rd ESSDERC
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.222-225, ⟨10.1109/ESSDERC.2013.6818859⟩
43th European Solid State Device Research Conference, ESSDERC 2013
43th European Solid State Device Research Conference, ESSDERC 2013, Sep 2013, Bucarest, Romania. pp.1-4
For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::350cd2525d9cc611108b16d70fc6b6b5
https://doi.org/10.1109/essderc.2013.6818859
https://doi.org/10.1109/essderc.2013.6818859
Autor:
Jean-Robert Manouvrier, Pascal Nouet, Pascal Fonteneau, Florence Azaïs, Charles-Alexandre Legrand
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2009, 49 (12), pp.1424-1432. ⟨10.1016/j.microrel.2009.06.056⟩
EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium
EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1-3A.2_10, ⟨10.1109/EOSESD.2007.4401748⟩
Microelectronics Reliability, Elsevier, 2009, 49 (12), pp.1424-1432. ⟨10.1016/j.microrel.2009.06.056⟩
EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium
EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1-3A.2_10, ⟨10.1109/EOSESD.2007.4401748⟩
International audience; A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring imple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f719a56dd2269f04bcc72cfa68e4fba
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00435866
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00435866