Zobrazeno 1 - 10
of 473
pro vyhledávání: '"Charles W. Tu"'
Autor:
Chien-Wei Huang, Chun-Nien Liu, Sheng-Chuan Mao, Wan-Shao Tsai, Zingway Pei, Charles W. Tu, Wood-Hi Cheng
Publikováno v:
Sensors, Vol 24, Iss 6, p 1897 (2024)
A new scheme presents MEMS-based LiDAR with synchronized dual-laser beams for detection range enhancement and precise point-cloud data without using higher laser power. The novel MEMS-based LiDAR module uses the principal laser light to build point-c
Externí odkaz:
https://doaj.org/article/9577388481084f94b2be421a51bd2919
Autor:
Kai-Chieh Chang, Chia-Ling Tsai, Wei-Chih Cheng, null Zon, Chun-Nien Liu, Tien-Tsorng Shih, Sheng-Lung Huang, Charles W. Tu, Wood-Hi Cheng
Publikováno v:
Optical Fiber Communication Conference (OFC) 2023.
We demonstrate record gain of 18-dB broadband single-mode Cr-doped crystalline core fiber employing small core diameter. The gain-per-unit-length is 90 dB/m, which is higher than currently achieved Er and Bi-doped fibers of 0.6 - 3 dB/m.
Autor:
Charles W. Tu
Publikováno v:
The Handbook of Surface Imaging and Visualization ISBN: 9780367811815
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45222cceb8b65c55b4dacb8f63ff451c
https://doi.org/10.1201/9780367811815-30
https://doi.org/10.1201/9780367811815-30
Autor:
Y. J. Kuang, K. Zelazna, Kin Man Yu, Robert Kudrawiec, Wladek Walukiewicz, Charles W. Tu, A. V. Luce
Publikováno v:
Solar Energy Materials and Solar Cells. 188:99-104
Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediat
Publikováno v:
Physical Review B. 103
Semiconductor quantum dots (QDs) acting as single-photon-emitters are potential building blocks for various applications in future quantum information technology. For such applications, a thorough understanding and precise control of charge states an
Recent research indicates that marine reserves can both improve fisheries yields of target species and maintain the persistence of bycatch species. However, the prevalent equilibrium analyses prevent our understandings in transient behavior at short-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e624f5cc24fd1f2f3bbf1b7ea71b32
https://doi.org/10.1101/2020.11.14.382705
https://doi.org/10.1101/2020.11.14.382705
Quantum dots (QDs) formed in semiconductor nanowires (NWs) form a basis for studying interesting quantum phenomena and provide an exciting platform for various device applications, where in-depth understanding of the formation and electronic properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99aa2fa369070bb3b592d0f0a3e8bb3f
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-166098
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-166098
Autor:
Jang-Won Kang, Charles W. Tu, Sung Ha Park, Devika Mudusu, Koteeswara Reddy Nandanapalli, Sreekantha Reddy Dugasani
Publikováno v:
Current Applied Physics. 17:1699-1706
This article reports the electrical characteristics of pristine, polycrystalline and single crystalline nickel (Ni) layer capped zinc oxide (ZnO) nanowires. Core/shell ZnO/Ni nanostructures were developed using chemical vapor deposition and e-beam ev
Autor:
Koteeswara Reddy Nandanapalli, Jang-Won Kang, Sung Ha Park, Charles W. Tu, Devika Mudusu, Sreekantha Reddy Dugasani
Publikováno v:
RSC Advances. 7:41452-41459
Single crystalline tin(II) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures betw
Autor:
Mattias, Jansson, Luca, Francaviglia, Rui, La, Roman, Balagula, Jan E, Stehr, Charles W, Tu, Anna, Fontcuberta I Morral, Weimin M, Chen, Irina A, Buyanova
Publikováno v:
Nanotechnology. 30(40)
Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N