Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Charles W. Jurgensen"'
Autor:
David N. Tomes, Anthony E. Novembre, J. Frackoviak, L. E. Trimble, George K. Celler, Charles W. Jurgensen, R. R. Kola
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
The Hampshire Instruments Model 5000 Stepper is a commercially available laser based 1:1 proximity x-ray stepper. The source of this system is a 25 watt Nd:glass slab laser which is focused to approximately 200 micrometers diameter spot on an iron al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b48677a104252ce4c962592187449b
https://doi.org/10.1117/12.146508
https://doi.org/10.1117/12.146508
Autor:
R. R. Kola, Larry F. Thompson, Charles W. Jurgensen, David N. Tomes, Richard R. Freeman, J. Frackoviak, George K. Celler, L. E. Trimble, Anthony E. Novembre
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
Preliminary evaluation of a 1:1 proximity x-ray stepper, built by Hampshire Instruments is discussed here. This stepper, model 5000P, is the first commercial system that uses a laser- generated plasma x-ray source. It was extensively tested at the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91b9fd1f8711c09bf15cf86cf464d96
https://doi.org/10.1117/12.136015
https://doi.org/10.1117/12.136015
Publikováno v:
SPIE Proceedings.
Mask erosion is not significant in tn-layer lithography where the etching mask is Si02; however, mask erosion may significantly affect etching profiles and process latitudes during the pattern transfer step in bi-layer lithography. We discuss the eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::581b6955e0719c146ec703786fd6a923
https://doi.org/10.1117/12.20093
https://doi.org/10.1117/12.20093
Publikováno v:
SPIE Proceedings.
We have formulated a kinetic theory of bombardment induced interface evolution to describe etching by an axisymmetric angular distribution of energetic particles where the volume removed per particle is a function of energy and angle relative to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1473eb8934ed8f8dc3ec5e56b66941ef
https://doi.org/10.1117/12.978042
https://doi.org/10.1117/12.978042
Autor:
Anthony E. Novembre, R. R. Kola, George K. Celler, L. E. Trimble, Charles W. Jurgensen, J. Frackoviak, D. A. Mixon, W. W. Tai
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2834
The copolymer of trimethylsilylmethyl methacrylate with chloromethylstyrene [P(SI‐CMS)] is a negative electron‐beam and deep‐UV resist which can withstand erosion in O2‐containing plasma environments [J. R. Maldonado, J. Electron. Mater. 19,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4f1d1c3250ddf4ae2047a25976a757
https://doi.org/10.1116/1.586611
https://doi.org/10.1116/1.586611
Autor:
Donald M. Tennant, C. Biddick, Anthony E. Novembre, R. R. Kola, L. E. Trimble, George K. Celler, J. Frackoviak, Charles W. Jurgensen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:3186
We describe some key aspects of proximity x‐ray technology currently being developed at AT&T, from mask fabrication to wafer patterning. The masks are primarily based on polycrystalline Si membranes, 1 μm thick, which are formed directly on optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a19024431fdea21b2bdb5e6e3e419e
https://doi.org/10.1116/1.585909
https://doi.org/10.1116/1.585909
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3301
Tungsten is attractive for very large scale integrated device metallization and as absorber for x‐ray lithographic masks. To minimize distortions in an x‐ray mask, intrinsic stresses in the absorber films have to be low and reproducible. We prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a0c6e5a8e0978db93f7837ad375357
https://doi.org/10.1116/1.585330
https://doi.org/10.1116/1.585330
Autor:
W. W. Tai, Anthony E. Novembre, Larry F. Thompson, David N. Tomes, Richard R. Freeman, Charles W. Jurgensen, L. E. Trimble, R. R. Kola, J. Frackoviak, George K. Celler
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3198
This paper reports on the initial lithographic evaluation of a commercial 1:1 proximity stepper that uses a laser‐based plasma x‐ray source. Our preliminary tests have shown that 0.4‐ and 0.5‐μm lines and spaces can be printed consistently o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38e519dbc72157dee3f286706ceb2c4
https://doi.org/10.1116/1.585286
https://doi.org/10.1116/1.585286
Autor:
L. E. Trimble, Anthony E. Novembre, R. R. Kola, W. W. Tai, Charles W. Jurgensen, George K. Celler, J. Frackoviak
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3280
A subtractive process to form subhalf micron, vertical‐walled patterns in half‐micron thick tungsten on x‐ray masks has been developed. Electron‐beam lithography was used to form resist patterns on a structure consisting of 300 A Cr on 5000 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10db41f5a86ee2389b1d11e283a74605
https://doi.org/10.1116/1.585304
https://doi.org/10.1116/1.585304
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2938-2944
A steady‐state model based on a silicon material balance has been proposed to predict the oxygen reactive‐ion‐etching resistance of organosilicon polymers. This model assumes that the rate determining step is sputtering of SiO2 film that forms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0580dea38f711693cfec9afbbee2d4
https://doi.org/10.1116/1.575455
https://doi.org/10.1116/1.575455