Výsledky vyhledávání - "Charles Renard"

Pixel device based on a quantum well: Preliminary results on gate dielectrics

Autor: Geraldine Hallais, Charles Renard, Antoine Barbier, Eric Imbernon, Nicolas Fourches

Publikováno v: Nucl.Instrum.Meth.A
15th Pisa Meeting on Advanced Detectors
15th Pisa Meeting on Advanced Detectors, May 2022, La Biodola, Italy. pp.167906, ⟨10.1016/j.nima.2022.167906⟩

International audience; The development of pixel arrays close to the interaction point in large detector systems used in high energy physics require high radiation hardness for the pixels and their readout. A pixel device based on a quantum well, cal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af1e4adcc7fa916cbc408825ec7681bd
https://doi.org/10.1016/j.nima.2022.167906

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Akademický článek

Prevalence and associated risk factors for Kaposi's sarcoma among HIV-positive patients in a referral hospital in Northern Tanzania: a retrospective hospital-based study.

Autor: Semango, George P.^1,2,3 (AUTHOR) george.semango@nm-aist.ac.tz, Charles, Renard M.¹ (AUTHOR) renardcharles1991@gmail.com, Swai, Consolata I.^1,2 (AUTHOR) consolataignas@gmail.com, Mremi, Alex⁴ (AUTHOR) alexmremi@gmail.com, Amsi, Patrick⁴ (AUTHOR) amsipatrick@yahoo.com, Sonda, Tolbert¹ (AUTHOR) t.sonda@kcri.ac.tz, Shao, Elichilia R.^1,5 (AUTHOR) elichilia2004@yahoo.co.uk, Mavura, Daudi R.² (AUTHOR) daudi692002@gmail.com, Joosten, Leo A. B.^6,7 (AUTHOR) Leo.Joosten@radboudumc.nl, Sauli, Elingarami³ (AUTHOR) elingarami.nkya@nm-aist.ac.tz, Nyindo, Mramba¹ (AUTHOR) mnyindo2002@yahoo.co.uk

Publikováno v: BMC Cancer. 12/17/2018, Vol. 18 Issue 1, p1-8. 8p. 1 Diagram, 2 Charts.

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Atypical reversed pressure-induced phase transformation in Ge nanowires

Autor: Eugenio Calandrini, Doriane Djomani, Jean Paul Itié, Charles Renard, Pascale Roy, Daniel Bouchier, Francesco Capitani, Laetitia Vincent, Jean Blaise Brubach

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (23), pp.235711. ⟨10.1088/1361-6528/ab7b06⟩

Phase transformations of Ge under compression/decompression cycle at room temperature were studied in a diamond anvil cell (DAC) using in situ synchrotron x-ray diffraction, Raman spectroscopy and near infrared absorption techniques. Upon compression

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33379cc63ee918d42ba7b9ee46cb2610
https://hal.archives-ouvertes.fr/hal-03004890

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Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy

Autor: Giulia Di Iorio, Riccardo Rurali, Michele Amato, Claudia Fasolato, Laetitia Vincent, Doriane Djomani, Vincent Paillard, Charles Renard, Ilaria Zardo, Marta De Luca

Publikováno v: Nano Letters
Nano Letters, American Chemical Society, 2018, 18 (11), pp.7075-7084. ⟨10.1021/acs.nanolett.8b03073⟩
Nano Letters, American Chemical Society, 2018, ⟨10.1021/acs.nanolett.8b03073⟩
Nano Letters, 2018, 18 (11), pp.7075-7084. ⟨10.1021/acs.nanolett.8b03073⟩
Sapienza Università di Roma-IRIS
Digital.CSIC. Repositorio Institucional del CSIC
instname

Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different crystal phases in a nanostructure, which enables the formation of polytypic heterostructures where the material composition is unchanged. This characteristic boosts

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0aad4d00b66b28e7cc6bd4a13efbc50
https://doi.org/10.1021/acs.nanolett.8b03073

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In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy

Autor: Gilles Patriarche, Mohammad Reza Aziziyan, Thierno M. O. Diallo, Richard Arès, Roxana Arvinte, Jean-Christophe Harmand, Abderraouf Boucherif, Simon Fafard, Charles Renard

Publikováno v: Small. 18:2101890

Breakthroughs in cutting-edge research fields such as hetero-integration of materials and the development of quantum devices are heavily bound to the control of misfit strain during heteroepitaxy. While remote epitaxy offers one of the most intriguin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d697592b534f3743429a42d0e6f72b73
https://doi.org/10.1002/smll.202101890

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Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Autor: F. Farhati, G. Halais, M. S. Belkaid, O. Boussoum, Charles Renard

Publikováno v: Journal of Nano and Electronic Physics
Journal of Nano and Electronic Physics, Sumy State University (Sumy, Ukraine), 2019, 11 (2), pp.02010-1-02010-7. ⟨10.21272/jnep.11(2).02010⟩

У роботі пропонується дослідити вплив нагрівання газу та RF потужності розпилення на електричні, структурні та оптичні властивості тонк

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff2badc147e8e59807e568ebe54b1462
https://hal.archives-ouvertes.fr/hal-02322601

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Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging

Autor: Sylvain Lemettre, Clement Bessouet, Laetitia Vincent, Charles Renard, Johan Moulin, Ming Wu, Philippe Coste, Alain Bosseboeuf, Sana Hammami

Publikováno v: Sensors and Materials
Sensors and Materials, Myu scientific publishing, 2019, 31 (9), pp.2825. ⟨10.18494/SAM.2019.2312⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f03928494b25f87b09ef1551631d74
https://hal.archives-ouvertes.fr/hal-03029390

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Comparative study of Au/Ti, Au/V and Au/Zr films oxygen gettering ability

Autor: J.-L. Perrossier, Charles Renard, M. Wu, P. Coste, S. Perrot, Alain Bosseboeuf, J. Moulin

Publikováno v: Thin Solid Films. 616:543-549

In this work, thermal diffusion of titanium, vanadium and zirconium through a thin capping gold layer has been investigated and compared in terms of oxygen gettering ability after activation at low temperature. The films were characterized by means o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7b55e04bc91564c656ed8faa3de284c
https://doi.org/10.1016/j.tsf.2016.09.003

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Shear-driven phase transformation in silicon nanowires

Autor: Charles Renard, Daniel Bouchier, B Belier, Gilles Patriarche, M Fakfakh, Doriane Djomani, Laetitia Vincent

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2018, 29 (12), pp.125601. ⟨10.1088/1361-6528/aaa738⟩

We report on an unprecedented formation of allotrope heterostructured Si nanowires by plastic deformation based on applied radial compressive stresses inside a surrounding matrix. Si nanowires with a standard diamond structure (3C) undergo a phase tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5eb7753b2f1d0240f7e05f9579aedeb
https://hal.archives-ouvertes.fr/hal-02322687

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Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Autor: Daniel Bouchier, Marie Coste, Laetitia Vincent, Charles Renard, Timothée Molière, Nikolay Cherkashin, Géraldine Hallais

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩
Thin Solid Films, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩

cited By 0; International audience; In this study, GaAs crystals were grown by chemical beam epitaxy on nominal (001) Si substrate over Ge nano-seeds placed within nano-holes opened through a 0.6 nm silica layer. GaAs crystal morphology and atomic or

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b32c349119c0bd5b864c01ea60946e16
https://hal.archives-ouvertes.fr/hal-01736186

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