Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Charles Mevaa"'
Publikováno v:
Solid-State Electronics. 41:857-864
The electrical characteristics of Schottky diodes fabricated on AlInAs layers grown on InP (100) substrates by molecular beam epitaxy in the temperature range 300 to 550°C were investigated by means of current-voltage and low frequency noise (LFN) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::813cd75f22ed8b6d9ad271fdb76bb649
https://doi.org/10.1016/s0038-1101(97)00035-x
https://doi.org/10.1016/s0038-1101(97)00035-x
Publikováno v:
Proceedings of Semiconducting and Semi-Insulating Materials Conference.
The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8f62d1e37532975d55db6478e00aa1
https://doi.org/10.1109/sim.1996.570932
https://doi.org/10.1109/sim.1996.570932
Autor:
Taha Benyattou, E. Bearzi, Pierre Viktorovitch, Gérard Guillot, Jean-Christophe Harmand, M. Pitaval, Michel Gendry, M. Oustric, Charles Mevaa, Xavier Letartre, M. Quillec, Olivier Marty, G. Hollinger
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
We have investigated the origin of the semi-insulating (SI) behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As by correlating electrical and structural properties of epilayers grown by MBE on InP in the 300/spl deg/C-565/spl deg/C temperature ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cec759355a460fd19ceb80959936373
https://doi.org/10.1109/iciprm.1996.492038
https://doi.org/10.1109/iciprm.1996.492038