Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Charles LaRow"'
Autor:
P. Paliwoda, Jeff Siddiqui, Gaddi Haase, Charles LaRow, Jean Yang-Scharlotta, Scott Pozder, James May, Matthew Hogan
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
High consequence ICs and discrete components: • Medical implantable devices, life-support systems, aeronautics, automotive safety to self driving cars, satellites, defense, etc. Low volume: • Manufacturers of unique parts with a small fabs • Sm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a8c2438300db3ef33f925da319a6a2
https://doi.org/10.1109/iirw.2017.8361245
https://doi.org/10.1109/iirw.2017.8361245
Autor:
Chadwin Young, Matt Ring, Jim Lloyd, Avyaya Jayanthinarasimham, Charles LaRow, Alexander Shluger, Marco A. Villena
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
One of the main challenges of the 2D materials is to solve the compatibility problems with others materials. •The community does not help to solve these problems. It is very common for the groups hide the information.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::556a36b76506e37baed232ff12aba40d
https://doi.org/10.1109/iirw.2017.8361246
https://doi.org/10.1109/iirw.2017.8361246
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
In this paper, we present a simple experimental setup to expand our fast TDDB methodology [1] into a broad voltage range covering FEOL and BEOL TDDB testing. The new setup uses a combination of standard (SMU) and fast measurement unit (FMU) in differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f6d939ef104118ded88990a5e659503
https://doi.org/10.1109/iirw.2017.8361225
https://doi.org/10.1109/iirw.2017.8361225
Autor:
Rui Zhang, Giovanni Verzellesi, Giuseppina Puzzilli, Katja Puschkarsky, Charles LaRow, Alexander Shluger, Yuri Tkachev, Marco A. Villena, Kexin Yang, Elnatan Metaev, Milan Pesic, Jim Lloyd, Matt Ring, Peter Paliwoda, Sheldon Tan, Chadwin Young
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
• The deep collaboration between the experimental and simulation groups is needed. • This collaboration require that: • Experimental groups should previously know what kind of information the simulations could provide and what information the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eeebcf4b2b572d8082e88ed58cdc082
https://doi.org/10.1109/iirw.2017.8361248
https://doi.org/10.1109/iirw.2017.8361248
Publikováno v:
2016 IEEE International Integrated Reliability Workshop (IIRW).
This work presents a new experimental setup to perform highly accelerated Time Dependent Dielectric Breakdown (TDDB) in constant voltage stress (CVS) mode with capability of collecting failure distributions in sub millisecond regime. The new apparatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5912bd0a86fd5111f5f9862f21876df9
https://doi.org/10.1109/iirw.2016.7904900
https://doi.org/10.1109/iirw.2016.7904900
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Similarities and disparities between time-dependent clustering model and combination-based approach are thoroughly investigated. It is shown that two approaches can provide similar description of non-uniform dielectric breakdown provided that a diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abd7f9b6a275461fe933471b75aa6527
https://doi.org/10.1109/irps.2014.6860662
https://doi.org/10.1109/irps.2014.6860662
Publikováno v:
2012 International Electron Devices Meeting.
In this work, experimental evidence of time-to-breakdown power-law voltage acceleration for high-κ/SiO 2 bilayer dielectrics is presented. The temperature dependence of voltage acceleration power-law exponents for high-κ/SiO 2 bilayer stressed in p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ffa9391185ef1c3914d40affe841cc5
https://doi.org/10.1109/iedm.2012.6479123
https://doi.org/10.1109/iedm.2012.6479123
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
We report a generalized successive failure (or breakdown) methodology for non-Weibull distributions and successfully apply it to both SiO 2 single-layer dielectric with progressive BD and high-κ/SiO 2 bilayer dielectrics in intrinsic failure mode. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9baa4727493a8fff883167da8cabf59e
https://doi.org/10.1109/irps.2012.6241863
https://doi.org/10.1109/irps.2012.6241863
Publikováno v:
2011 International Electron Devices Meeting.
We report that charge trapping has a strong impact on failure detection, yielding many anomalous non-Poisson area effects in nFETs high-κ stacks. Time-to-failure (T FAIL ) distributions and voltage accelerations are found to strongly depend on stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::175ad0918ca3ffc388af3c6c08f55e3d
https://doi.org/10.1109/iedm.2011.6131577
https://doi.org/10.1109/iedm.2011.6131577