Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Charles Hoggatt"'
Publikováno v:
Third International Conference on Advances in Information Processing and Communication Technology - IPCT 2015.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863de806f50588dbda1b319158e9293e
https://doi.org/10.15224/978-1-63248-077-4-22
https://doi.org/10.15224/978-1-63248-077-4-22
Publikováno v:
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
The impact of the shield resistance (Rsh) on the waveform ringing and system efficiency is assessed in this work for 30V trench power FETs with shielded-gate (TP-FETs). Two different approaches, named distributed and local Rsh, are extensively invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e7d4b4e6ff27dc768a9873dfafb908
https://doi.org/10.1109/apec.2014.6803300
https://doi.org/10.1109/apec.2014.6803300
Autor:
Hal Massie, Nick Martens, Laurence Golonka, Jaume Roig, Eddy De Backer, Charles Hoggatt, Gordy Grivna, S. Mouhoubi, Tony Colpaert, Freddy De Pestel, Peter Coppens, Gary H. Loechelt, Filip Bauwens
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1–5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc3ca2a9c7c4a0568d8af95f0c8170f
https://doi.org/10.1109/ispsd.2012.6229029
https://doi.org/10.1109/ispsd.2012.6229029
Autor:
Y. Wen, Gary H. Loechelt, Charles Hoggatt, S. C. Shastri, S. Dow, W.Z. Cai, Gordy Grivna, M. Azam
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
In the framework of a lumped-element SPICE model, we extract RF parameters for a MIM capacitor, such as series resistance and inductance. The extraction method is validated through a "dummy" MIM capacitor where the dielectric layer is omitted during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d37740dcfa83af85328090443b6197e
https://doi.org/10.1109/icmts.2004.1309485
https://doi.org/10.1109/icmts.2004.1309485