Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Charles H. Dennison"'
Autor:
Carl Schell, J. Reed, W. Hunks, Stephen J. Hudgens, Charles H. Dennison, Regino Sandoval, W. Li, Tyler Lowrey, J. Fournier, J. F. Zheng, Wolodymyr Czubatyj
Publikováno v:
IEEE Electron Device Letters. 31:999-1001
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adb43fb4b00b8448c584199be7be37f
https://doi.org/10.1109/led.2010.2052233
https://doi.org/10.1109/led.2010.2052233
Publikováno v:
IEEE Electron Device Letters. 31:869-871
Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd3034bee85242f62d427f810b56beb
https://doi.org/10.1109/led.2010.2051135
https://doi.org/10.1109/led.2010.2051135
Autor:
J. Cleary, Carl Schell, J. Reed, W. Hunks, P. Chen, Stephen J. Hudgens, Jim Ricker, W. Li, Tyler Lowrey, Regino Sandoval, Wolodymyr Czubatyj, Charles H. Dennison, J. F. Zheng
Publikováno v:
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.
MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe35768e74183eed8d377309aa14d71
https://doi.org/10.1109/nvmts.2011.6137102
https://doi.org/10.1109/nvmts.2011.6137102
Autor:
Stephen J. Hudgens, Sergey A. Kostylev, Tyler Lowrey, Charles H. Dennison, Guy C. Wicker, Wally Czubatyj
Publikováno v:
MRS Proceedings. 803
Phase change memory devices were originally reported by S. R. Ovshinsky [1] in 1968. A 256-bit phase-change memory array based on chalcogenide materials was reported in 1970 [2], Recent advances in phase change materials, memory device designs, and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2135c86e00759a72bb7cb8267ba49a3a
https://doi.org/10.1557/proc-803-hh2.1
https://doi.org/10.1557/proc-803-hh2.1
Autor:
Charles H. Dennison, Augustus H. Gill
Publikováno v:
Journal of the American Chemical Society. 24:397-398
n/a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e85938d6dcee75339bec3113ae79eb4
https://doi.org/10.1021/ja02018a015
https://doi.org/10.1021/ja02018a015