Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Charles H. Ahn"'
Autor:
Kidae Shin, Stephen Eltinge, Sangjae Lee, Hyungki Shin, Juan Jiang, Hawoong Hong, Bruce A. Davidson, Ke Zou, Sohrab Ismail‐Beigi, Charles H. Ahn, Frederick J. Walker
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 10, Pp n/a-n/a (2023)
Abstract Interlayer excitons in solid‐state systems have emerged as candidates for realizing novel platforms ranging from excitonic transistors and optical qubits to exciton condensates. Interlayer excitons have been discovered in 2D transition met
Externí odkaz:
https://doaj.org/article/2dfa60c9ff58499cafe1ad1df362fff2
Autor:
Chong Liu, Ryan P. Day, Fengmiao Li, Ryan L. Roemer, Sergey Zhdanovich, Sergey Gorovikov, Tor M. Pedersen, Juan Jiang, Sangjae Lee, Michael Schneider, Doug Wong, Pinder Dosanjh, Frederick J. Walker, Charles H. Ahn, Giorgio Levy, Andrea Damascelli, George A. Sawatzky, Ke Zou
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
The origin of the photoemission replica bands in monolayer FeSe/SrTiO3 remains controversial. Here, the authors perform angle-resolved photoemission spectroscopy with polarized photon on FeSe/SrTiO3 and observe high-order replica bands with high inte
Externí odkaz:
https://doaj.org/article/fa1242d20ac44dd99681f33e24acda98
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111106-111106-7 (2021)
Topological crystalline insulators (TCIs) promise spin-polarized or dissipationless transport, which can be controlled by crystal symmetry breaking through applied strain or electric field. To realize TCI devices with gate-controlled topological stat
Externí odkaz:
https://doaj.org/article/5143f597423a4c0c9afa0b0990081e7e
Publikováno v:
APL Materials, Vol 9, Iss 4, Pp 041104-041104-6 (2021)
BaTiO3 exhibits several functional properties, such as high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity. These properties can be used for a variety of applications, such as ferroelectric tunnel junctio
Externí odkaz:
https://doaj.org/article/324e0b9a673544eeba4642593b7d1c13
Autor:
Juan Jiang, Sangjae Lee, Fucong Fei, Fengqi Song, Elio Vescovo, Konstantine Kaznatcheev, Frederick J. Walker, Charles H. Ahn
Publikováno v:
APL Materials, Vol 8, Iss 6, Pp 061106-061106-7 (2020)
The transition metal dichalcogenide Ir1−xPtxTe2 displays both superconductivity and a topological band structure. Using angle-resolved photoemission spectroscopy, we obtain a comprehensive understanding of the three-dimensional electronic structure
Externí odkaz:
https://doaj.org/article/4f7e9567f46f4c22b0b9cd0c0aba5a57
Autor:
Ke Zou, Stephen D. Albright, Omur E. Dagdeviren, M. D. Morales-Acosta, Georg H. Simon, Chao Zhou, Subhasish Mandal, Sohrab Ismail-Beigi, Udo D. Schwarz, Eric I. Altman, Frederick J. Walker, Charles H. Ahn
Publikováno v:
APL Materials, Vol 7, Iss 5, Pp 051106-051106-6 (2019)
SnTe is a topological crystalline insulator that exhibits crystal symmetry protected topological surface states (SS), which are useful for the development of novel devices, such as low-dissipation transistors. However, major obstacles remain to probe
Externí odkaz:
https://doaj.org/article/eb697bdda4b9452ca379bc5fcc145643
Publikováno v:
APL Materials, Vol 3, Iss 6, Pp 062303-062303-9 (2015)
The relative energies and occupancies of valence orbital states can dramatically influence collective electronic and magnetic phenomena in correlated transition metal oxide systems. We review the current state of research on the modification and cont
Externí odkaz:
https://doaj.org/article/ec36a04ffd78407ca0bb2d68d68c5058
Publikováno v:
APL Materials, Vol 3, Iss 6, Pp 062510-062510-5 (2015)
Semiconductor materials are being used in an increasingly diverse array of applications, with new device concepts being proposed each year for solar cells, flat-panel displays, sensors, memory, and spin transport. This rapid progress of invention out
Externí odkaz:
https://doaj.org/article/3c0e1213d3db4f5d9f6fb46fde862448
Autor:
Kidae Shin, Stephen Eltinge, Sangjae Lee, Hyungki Shin, Juan Jiang, Hawoong Hong, Bruce A. Davidson, Ke Zou, Sohrab Ismail‐Beigi, Charles H. Ahn, Frederick J. Walker
Publikováno v:
Advanced Materials Interfaces. 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a47f8303c6de68a3cabeb6f9cdc1b2
https://doi.org/10.1002/admi.202202320
https://doi.org/10.1002/admi.202202320
Autor:
Myung-Geun Han, Yangyang Zhang, Nagarajan Valanoor, Frederick Walker, Charles H Ahn, Yimei Zhu
Publikováno v:
Microscopy and Microanalysis. 28:2264-2266
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74da33652d6426ecf6b37692bc742b5c
https://doi.org/10.1017/s1431927622008704
https://doi.org/10.1017/s1431927622008704