Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Charles D. E. Lakeman"'
Publikováno v:
Microelectronics International. 20:52-55
As the number of passive components in electronic circuits increases, new methods for fabricating passives are under development to optimize utilization of board space. In this paper, we will describe the performance capabilities of TPL's micro‐con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833d5acc125e03c344b6d6890b7448b7
https://doi.org/10.1108/13565360310455544
https://doi.org/10.1108/13565360310455544
Publikováno v:
Journal of Sol-Gel Science and Technology. 16:83-91
The development of stress in the SrBi2Ta2O9 (SBT) films generated from a chemical solution deposition method was monitored during processing using wafer curvature measurements. Stress measurements of the entire Si/SiO2/Pt/SBT stack revealed an overal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679624d1705d9c6bf515c5335552a6e2
https://doi.org/10.1023/a:1008765221865
https://doi.org/10.1023/a:1008765221865
Publikováno v:
Journal of Materials Research. 13:1596-1606
The growth of epitaxial thin films of Li1–xNb1–xWxO3 from solution precursors on single-crystal LiNbO3 substrates is reported. An all-alkoxide solution readily gave single phase powders after simply mixing the constituent components, whereas an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b4b68aa894c55a297f89128e4727e7
https://doi.org/10.1557/jmr.1998.0220
https://doi.org/10.1557/jmr.1998.0220
Publikováno v:
Integrated Ferroelectrics. 22:45-53
SrBi2Ta2O9 (SBT) films have received considerable attention for use as nonvolatile memory elements. We have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, we will present strategies use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a322ffc920130ff3faf775583cca7fa4
https://doi.org/10.1080/10584589808208028
https://doi.org/10.1080/10584589808208028
Autor:
and Carlos Levi, Nobuya Machida, Yin Xia, Xuehua Wu, Stanley E. Anderson, Hellmut Eckert, Leo van Wüllen, Charles D. E. Lakeman, Fred F. Lange
Publikováno v:
The Journal of Physical Chemistry B. 101:9180-9187
The spatial distribution and atomic mobility of Li ions in the solid solution system Li1-xNb1-xWxO3 (0 ≤ x ≤ 0.5) have been studied using solid-state NMR techniques. To maintain charge balance, for each tungsten atom substituting on a niobium sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f1d9694c0111c2627ac144ea508967a
https://doi.org/10.1021/jp971751z
https://doi.org/10.1021/jp971751z
Publikováno v:
Journal of Materials Research. 12:1391-1400
A solution precursor method based on metal alkoxides was used to produce epitaxial LiNbO3 thin films, ≈200 nm thick, on (0001) sapphire substrates. Transmission electron. microscopy revealed that the major cause of surface roughness in these films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da6ca48ab6b5bc011457395256476df
https://doi.org/10.1557/jmr.1997.0189
https://doi.org/10.1557/jmr.1997.0189
Observation of frequency dependence in the electromechanical properties of ferroelectric thin-layers
Publikováno v:
Ferroelectrics. 184:61-68
The electromechanical properties of sol-gel derived ferroelectric Pb(Zro.53Tio.47)O3 (PZT 53/47) thin layers deposited on silicon were determined as a function of fieldstrength, measurement frequency and total thickness. Both electrically-induced str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08f818de5c635d7ef7412d22c21e34ab
https://doi.org/10.1080/00150199608230245
https://doi.org/10.1080/00150199608230245
Publikováno v:
Journal of Materials Research. 10:1435-1440
The electromechanical properties of sol-gel-derived ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT 53/47) thin layers deposited on silicon were determined as a function of field strength, measurement frequency, and total thickness. Both electrically induced s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4239011c53c376815276cd67da30b912
https://doi.org/10.1557/jmr.1995.1435
https://doi.org/10.1557/jmr.1995.1435
Autor:
Charles D. E. Lakeman, David A. Payne
Publikováno v:
Materials Chemistry and Physics. 38:305-324
A review is given of the sol-gel processing of electrical and magnetic ceramics. Materials include, SnO2,In2O3, WO3, V2O5, VO2, ZrO2, ZnO, BaTiO3, YBa2Cu3O7−δ, Al2O3, 2MgO · 2Al2O3 · 5SiO2, SiO2. 3Al2O3 · 2SiO2, PbTiO3, Pb(Zr,Ti)O3, (Pb, La)(Zr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3432b3f1541c63a2c42aa6a4ea23aa1
https://doi.org/10.1016/0254-0584(94)90207-0
https://doi.org/10.1016/0254-0584(94)90207-0
Autor:
David A. Payne, Charles D. E. Lakeman
Publikováno v:
Ferroelectrics. 152:145-150
The properties of thin layer ferroelectrics appear to differ, sometimes considerably. from those of bulk ceramics of the same composition. Most notably, a broadening of the temperature dependent dielectric anomaly, an increase in the coercive field a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f3d4281dd58ac9a0ccc17c5cead37c
https://doi.org/10.1080/00150199408017611
https://doi.org/10.1080/00150199408017611