Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Charles Briscoe Larow"'
Autor:
Maihan Nguyen, Hyunchul Sagong, Mohammad Shahriar Rahman, Rakesh Ranjan, Ki-Don Lee, Susannah Laure Prater, Minhyo Kang, Caleb Dongkyun Kwon, Ahmed Shariq, Shamas Musthafa Ummer, Charles Briscoe Larow, Pavitra Ramadevi Perepa, Ashish Kumar Jha, Hwa-Sung Rhee, Iqbal Mahmud
Publikováno v:
IRPS
Reliability of Core and IO FinFET is extensively investigated with various process steps at Fin, Source/ Drain, sacrificial Gate-Metal, and High-Pressure D2 Anneal. By modulating the process knobs, we quantified the effect of oxide traps (at bulk or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8353026f93a67445c925c2a882169b61
https://doi.org/10.1109/irps46558.2021.9405134
https://doi.org/10.1109/irps46558.2021.9405134
Autor:
Timothy Basford, Charles Briscoe Larow, Rakesh Ranjan, Hyunchul Sagong, Gil Heyun Choi, Hwa-Sung Rhee, David J. Moreau, Pavitra Ramadevi Perepa, Maihan Nguyen, Ki-Don Lee, Minhyo Kang, Bong Ki Lee, Carolyn Cariss-Daniels, M. Shahriar Rahman, Colby Callahan
Publikováno v:
IRPS
Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c4110697aa876f94784c46bfcce66
https://doi.org/10.1109/irps45951.2020.9129066
https://doi.org/10.1109/irps45951.2020.9129066