Zobrazeno 1 - 10
of 3 094
pro vyhledávání: '"Charge Trapping"'
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 9, Pp n/a-n/a (2024)
The charge carrier mobility in tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light‐emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–sem
Externí odkaz:
https://doaj.org/article/08171dde76ab4f84883dcf7567db986d
Autor:
Manikandan Venkatesan, Jayashree Chandrasekar, Yung‐Chi Hsu, Ting‐Wang Sun, Po‐Yu Li, Xuan‐Ting King, Ming‐An Chung, Ren‐Jei Chung, Wen‐Ya Lee, Ye Zhou, Ja‐Hon Lin, Chi‐Ching Kuo
Publikováno v:
Advanced Science, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract Triboelectric nanogenerators (TENGs) have become reliable green energy harvesters by converting biomechanical motions into electricity. However, the inevitable charge leakage and poor electric field (EF) of conventional TENG result in inferi
Externí odkaz:
https://doaj.org/article/d773d069872f4adab20c8ca6cad084bf
Autor:
Se Hyun Kim, Younghwan Lee, Dong Hyun Lee, Geun Hyeong Park, Hyun Woo Jeong, Kun Yang, Yong Hyeon Cho, Young Yong Kim, Min Hyuk Park
Publikováno v:
Journal of Advanced Ceramics, Vol 13, Iss 3, Pp 282-292 (2024)
(Hf,Zr)O2 offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the nanoscale. However, scaling this material to sub-5 nm thickness poses several challenges, including the formati
Externí odkaz:
https://doaj.org/article/85af6f84cd88455aa281563f96ad9a66
Autor:
So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1686 (2024)
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and
Externí odkaz:
https://doaj.org/article/a009560ee3c94ae9b861118dcb7fa76d
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 4, Pp n/a-n/a (2024)
Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or
Externí odkaz:
https://doaj.org/article/9565ed8e283d42a1aac2b0a30c6623dd
Autor:
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec
Publikováno v:
Solids, Vol 4, Iss 4, Pp 356-367 (2023)
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as th
Externí odkaz:
https://doaj.org/article/33fa9c7181264f41b8b422aaccb04a85
Autor:
Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert
Publikováno v:
Micromachines, Vol 15, Iss 8, p 951 (2024)
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state con
Externí odkaz:
https://doaj.org/article/95d5c2543378425ebf982122f14117f1
An Ultrahigh‐Rectification‐Ratio WSe2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
Autor:
Lihua Wang, Xiaoyu He, Xiankun Zhang, Xiaofu Wei, Kuanglei Chen, Li Gao, Huihui Yu, Mengyu Hong, Zheng Zhang, Yue Zhang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract Although 2D material van der Waals heterostructures (vdWHs) exhibit many novel properties and applications, 2D homojunctions have unique advantages in interface lattice matching, band continuity, and charge transfer efficiency. However, the
Externí odkaz:
https://doaj.org/article/b222e0c5df2a4584b0c876ac792ba76f
Publikováno v:
Advanced Physics Research, Vol 3, Iss 2, Pp n/a-n/a (2024)
Abstract Amorphous silicon nitride (a‐Si3N4) is an essential material for a wide variety of electronic devices, ranging from its use in dielectric layers to its paramount importance for memory applications. In particular, the latter has triggered t
Externí odkaz:
https://doaj.org/article/7380cbe3e56a4e4f935f206a45a07ea0
Publikováno v:
Nanomaterials, Vol 14, Iss 12, p 1038 (2024)
Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2)
Externí odkaz:
https://doaj.org/article/1ab52ebcda3d4e05861dc229cc7784e5