Výsledky vyhledávání - "Charbonnier, S"

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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Autor: Cornet, C., Charbonnier, S., Lucci, I., Chen, L., Letoublon, A., Alvarez, A., Tavernier, K., Rohel, T., Bernard, R., Rodriguez, J. -B., Cerutti, L., Tournie, E., Leger, Y., Patriarche, G., Largeau, L., Ponchet, A., Turban, P., Bertru, N.

Publikováno v: Phys. Rev. Materials 4, 053401 (2020)

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then

Externí odkaz: http://arxiv.org/abs/2001.05386

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A universal description of III-V/Si epitaxial growth processes

Autor: Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.

Publikováno v: Phys. Rev. Materials 2, 060401 (2018)

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is

Externí odkaz: http://arxiv.org/abs/1804.02358

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