Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Chao-Yi Fang"'
Autor:
Zuhaib Khan, Yung-Hao Chang, Te-Lieh Pan, Yaung-Cheng Zhao, Yen-Yu Huang, Chia-Hung Lee, Jui-Sheng Chang, Cheng-Yi Liu, Cheng-Yuan Lee, Chao-Yi Fang, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 10, Pp 2303-2317 (2022)
The development of high-speed and high-brightness vertical-cavity surface-emitting lasers (VCSELs), which can serve as an efficient light source for optical wireless communication (OWC), play a crucial role in growth of the next generation of wireles
Externí odkaz:
https://doaj.org/article/9b672e7e02074b8f95d8ecaca663c1d9
Autor:
Chao-Yi Fang, 方照詒
92
AlGaN/GaN HEMTs (high electron mobility transistor) with WNx T-gate for high temperature applications were revealed. The materials growth of AlGaN/GaN HEMT structures and device fabrication techniques were developed, especially for high tempe
AlGaN/GaN HEMTs (high electron mobility transistor) with WNx T-gate for high temperature applications were revealed. The materials growth of AlGaN/GaN HEMT structures and device fabrication techniques were developed, especially for high tempe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/kyjgt2
Publikováno v:
In Acta Anaesthesiologica Taiwanica 2009 47(4):189-195
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 60:735-744
This paper proposes an innovative ultrasonic time of flight (TOF) measurement method with narrow-band transducers. By introducing the received ultrasonic wave peak time sequences (PTSs) of two slightly different frequencies, the relative TOF can be a
Publikováno v:
Japanese Journal of Applied Physics. 42:4207-4212
The surface damaging effects of the inductively coupled plasma (ICP) etch and the photoenhanced chemical (PEC) wet etch on AlGaN, GaN and InGaN were systematically investigated. The surface morphologies and the etch rates after ICP etch and PEC wet e
Publikováno v:
Japanese Journal of Applied Physics. 42:4193-4196
The Schottky diode behaviors of the TiWNx and the WNx Schottky contacts to n-GaN were investigated at different annealing temperatures. Both TiWNx and WNx films were deposited by the reactive DC sputtering method. The WNx/n-GaN contact exhibited exce
Publikováno v:
Zhongguo Zhong xi yi jie he za zhi Zhongguo Zhongxiyi jiehe zazhi = Chinese journal of integrated traditional and Western medicine. 32(4)
Lab diagnostics plays an important role in Chinese medicine (CM) microscopic syndrome differentiation owe to its properties such as microcosmic, objectivity, and quantitation. It is not replaceable in identifying dormant syndrome. Besides, it plays i
Publikováno v:
Applied Physics Letters. 80:4558-4560
Al0.15Ga0.85N/GaN high-electron-mobility transistor (HEMT) structures with various δ-doping concentrations and spacer thicknesses grown on sapphire by metalorganic chemical-vapor deposition are investigated. The Hall mobility is as high as 1333 cm2/
Publikováno v:
Zhongguo Zhong xi yi jie he za zhi Zhongguo Zhongxiyi jiehe zazhi = Chinese journal of integrated traditional and Western medicine. 31(8)
The integrative medicine concepts were analyzed from a brand-new view angle of lab diagnostics. The microcosmic, objective, early diagnostic, dynamic, and multi-point features of lab diagnostics can be integrated respectively with the macroscopic con
Publikováno v:
2008 Digest of Technical Papers - International Conference on Consumer Electronics.
This paper presents a smart card that integrates a one-time password generator and a flexible electrophoretic display (EPD). Asking a card user to enter a time-variable password provides added security by ensuring the card owner actually holds the cr