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pro vyhledávání: '"Chao-Yang Ke"'
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Chao-Yang Ke, Ming-Dou Ker
Publikováno v:
IEEE Transactions on Electron Devices. 67:2702-2709
As fast charging being a comprehensive application in universal serial bus (USB) type-C products, the high-power delivery may cause the USB type-C interface in the high risk of surge events. Therefore, a switch realized by high voltage N-type metal o
Autor:
Chao-Yang Ke, Ming-Dou Ker
Publikováno v:
IRPS
In USB type-C interface, owing to the shrinking space between the pins of connector and the required high-power delivery, the electrical overstress (EOS) events due to some pins shorting to V BUS pin during plugging or unplugging operations had been