Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chao-Yang Han"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 203-209 (2019)
Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width ( $W=8 \mu$ m) and different channel lengths ( $L=2,
Externí odkaz:
https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd
Publikováno v:
Chinese Physics B. 28:088502
The instability of p-channel low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) is investigated under negative gate bias stress (NBS) in this work. Firstly, a series of negative bias stress experiments is performed, the sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f00204bf7af276a748421cef7ce1ce9
https://doi.org/10.1088/1674-1056/28/8/088502
https://doi.org/10.1088/1674-1056/28/8/088502
Publikováno v:
Chinese Physics B; Aug2019, Vol. 28 Issue 8, p1-1, 1p