Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Chao-Kuang Wen"'
Autor:
Yin-Hung Chen, Pei-Ing Lee, Shikha Sakalley, Chao-Kuang Wen, Wei-Chun Cheng, Hui Sun, Sheng-Chi Chen
Publikováno v:
Nanomaterials, Vol 12, Iss 16, p 2814 (2022)
High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses t
Externí odkaz:
https://doaj.org/article/ac314d6ed6234e8fb469b533824ca72c
Autor:
Shih-Chieh Hsu, Yi-Hsin Huang, Sheng-Chi Chen, Chao-Kuang Wen, Wen-Sheng Yang, Ming-Han Liao, Tze-Yang Yeh, Ching-Ming Yang
Publikováno v:
Surfaces and Interfaces. 39:102907
Publikováno v:
Ceramics International. 46:27695-27701
High power impulse magnetron sputtering (HiPIMS) technology with extremely high target ionization rate is employed to deposit Ni3+-rich NiO films with enhanced p-type conductivity. However, the HiPIMS technique possesses a significant disadvantage; t
Publikováno v:
Thin Solid Films. 677:103-108
NiO thin films have been widely studied recently due to their intrinsic p-type conductivity and potential applications in various domains as transparent conductive oxides. However, the intrinsic p-type resistivity (ρ) of NiO is as high as 1013 Ω·c
Autor:
Xin Wang, Chung-Hsien Wang, Mingjiang Dai, Sheng-Chi Chen, Yu-Wei Lin, Hui Sun, Songsheng Lin, Chao-Kuang Wen, Tung-Han Chuang
Publikováno v:
Surface and Coatings Technology. 359:390-395
In this work, (Al, Co)-ZnO films were co-sputtered on glass substrate through radio frequency sputtering at 100 °C. The film's structure, electrical and magnetic properties as a function of Al doping content is investigated. The results indicate tha
Publikováno v:
Ceramics International. 43:S369-S375
Thanks to the intrinsic p-type conductivity, NiO films show great potential for applications in various domains. In this work, NiO x films were deposited in three dimensional physical vapor deposition (3D-PVD) system from metallic nickel target in pu
Publikováno v:
Vacuum. 140:144-148
In this study, Ni 31 Si 69 , Ni 43 Si 57 and Ni 63 Si 37 thin films with the thickness of 16 nm were deposited at room temperature by co-sputtering using Ni and Si targets. From the result of reflectivity-temperature measurement, it was found the NiS
Autor:
Chao-Feng Lu, Hui Sun, Tung-Han Chuang, Chao-Kuang Wen, Chia-Lung Tsai, Chung-Hsien Wang, Yi-Keng Fu, Sheng-Chi Chen
Publikováno v:
Surface and Coatings Technology. 303:203-208
In this study, [Co0.05GaxZn(0.95 − x)O] films with different Ga contents were co-sputtered on glass substrates by rf magnetron sputtering. The content of Co in the films was fixed at ~ 5 at.%. The content of x [Ga/(Ga + Co + Zn)] varied from 0 to 3
Publikováno v:
Coatings; Volume 8; Issue 5; Pages: 168
Coatings, Vol 8, Iss 5, p 168 (2018)
Coatings, Vol 8, Iss 5, p 168 (2018)
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In