Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Chao-Hui Yeh"'
Autor:
Chao-Hui Yeh, 葉兆輝
89
Nonlinear Residual Income Model Abstract Residual income has been proven to be a new approach of value relevance recently. The purpose of this study is to introduces residual income completely, and hopefully make some creativeness and contrib
Nonlinear Residual Income Model Abstract Residual income has been proven to be a new approach of value relevance recently. The purpose of this study is to introduces residual income completely, and hopefully make some creativeness and contrib
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53794244403138351031
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin. 46:1211-1228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9dc13233691cdc5b77473d86eb7407a
https://doi.org/10.1557/s43577-022-00270-0
https://doi.org/10.1557/s43577-022-00270-0
Publikováno v:
IEEE Transactions on Electron Devices, vol 68, iss 4
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects at advanced technology nodes, where conventional metal wires suffer from significant resistance increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0df5fc0b671223d5c61edad6d7aa57df
https://doi.org/10.1109/ted.2021.3061637
https://doi.org/10.1109/ted.2021.3061637
Autor:
Kazu Suenaga, Chun Hao Ma, Po-Wen Chiu, Chao-Hui Yeh, Yung-Chang Lin, Zheng-Yong Liang, Ying-Hao Chu
Publikováno v:
ACS Applied Electronic Materials. 2:3898-3905
Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs workin...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb29a13be596f97955b1467e99423815
https://doi.org/10.1021/acsaelm.0c00742
https://doi.org/10.1021/acsaelm.0c00742
Correction to: Two-dimensional materials enabled next-generation low-energy compute and connectivity
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d791c9f0a84ddb3095f4ae49a320feaf
https://doi.org/10.1557/s43577-022-00309-2
https://doi.org/10.1557/s43577-022-00309-2
Autor:
Arnab Pal, Shuo Zhang, Tanmay Chavan, Kunjesh Agashiwala, Chao‐Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
Advanced Materials. :2109894
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7543581bf927540db63ff7b91acf41d4
https://doi.org/10.1002/adma.202109894
https://doi.org/10.1002/adma.202109894
Autor:
Kamyar Parto, Tanmay Chavan, Arnab Pal, Kaustav Banerjee, Kunjesh Agashiwala, Wei Cao, Chao-Hui Yeh
Publikováno v:
Physical Review Applied. 15
Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa79919110e4b01f49c817e31024c22
https://doi.org/10.1103/physrevapplied.15.064068
https://doi.org/10.1103/physrevapplied.15.064068
Publikováno v:
ACS Nano. 13:8146-8154
Contact engineering has been the central issue in the context of high-performance field-effect transistors (FETs) made of atomic thin transition metal dichalcogenides (TMDs). Conventional metal contacts on TMDs have been made on top via a lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4ff9b9a15b463ea1a645e77bd00d2c
https://doi.org/10.1021/acsnano.9b03250
https://doi.org/10.1021/acsnano.9b03250
Autor:
Kazu Suenaga, Hsiang-Chieh Chen, Ho-Chun Lin, Chao-Hui Yeh, Po-Wen Chiu, Mei-Yin Chou, Yung-Chang Lin, Zheng-Yong Liang
Publikováno v:
ACS Nano. 13:3269-3279
One of the primary limitations of previously reported two-dimensional (2D) photodetectors is a low frequency response (≪ 1 Hz) for sensitive devices with gain. Yet, little efforts have been devoted to improve the temporal response of photodetectors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd683c63633c91cda431e2da17299aef
https://doi.org/10.1021/acsnano.8b09032
https://doi.org/10.1021/acsnano.8b09032
Publikováno v:
ACS Applied Materials & Interfaces. 11:6336-6343
High-quality graphene grown on metal-free substrates represents a vital milestone that provides an atomic clean interface and a complementary metal-oxide-semiconductor-compatible manufacturing process for electronic applications. We report a scalable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::270ff8683d7893c08340c30f22b4e30f
https://doi.org/10.1021/acsami.8b16957
https://doi.org/10.1021/acsami.8b16957