Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Chao-Hsuing Chen"'
Self-Synthesis and Characterization of One-Dimensional Tungsten Carbide and Tungsten Oxide Nanowires
Autor:
Chao-Hsuing Chen, 陳昭雄
94
In this thesis, the growth and physical/chemical properties of one-dimensional tungsten carbide (W2C) and tungsten oxide (W18O49) nanowires were investigated. Nanowires were self-synthesized on sputter-deposited tungsten based (W, WCx, WOx) t
In this thesis, the growth and physical/chemical properties of one-dimensional tungsten carbide (W2C) and tungsten oxide (W18O49) nanowires were investigated. Nanowires were self-synthesized on sputter-deposited tungsten based (W, WCx, WOx) t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/92001736785400316285
Autor:
Chao-Hsuing Chen, 陳昭雄
90
In this thesis, electrical and physical analyses were used to investigate the performance of niobium carbide (NbC) as a diffusion barrier in Cu metallization. In our study, physical analysis including XRD, XPS, SEM, AES, and SIMS depth profil
In this thesis, electrical and physical analyses were used to investigate the performance of niobium carbide (NbC) as a diffusion barrier in Cu metallization. In our study, physical analysis including XRD, XPS, SEM, AES, and SIMS depth profil
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8yafu9
Autor:
Chao-Hsuing Chen, Rong-Ming Ko, Yi-Cheng Kuo, Kai-Ming Uang, Shui-Jinn Wang, Hao-Yi Tsai, Bor-Wen Liou, Tron-Min Chen
Publikováno v:
Nanotechnology. 17:217-223
The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited W films prepared under different O2/Ar flow rate ratios (OAFRRs) in the sputtering gas is reported. After thermally annealing at 700?850??C in N2 ambient for 15?min, dense a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdba491ccf2cb53509bb04e7d20b8f97
https://doi.org/10.1088/0957-4484/17/1/036
https://doi.org/10.1088/0957-4484/17/1/036
Autor:
Chin Hong Wong, Tron-Min Chen, Kai-Ming Uang, Shui-Jinn Wang, Shu-Cheng Chang, Chao-Hsuing Chen, Rong-Ming Ko, Bor-Wien Liou
Publikováno v:
Nanotechnology. 16:273-277
The thermal annealing conditions in nitrogen ambient for the self-synthesis of tungsten carbide nanowires from sputter-deposited WC(x) films were investigated. Experimental results show that the temperature window for the growth of nanowires lies in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63bacec0f8e0bb53238bb42b8c66dcff
https://doi.org/10.1088/0957-4484/16/2/016
https://doi.org/10.1088/0957-4484/16/2/016
Autor:
Bor-Wen Liou, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Chao-Hsuing Chen, Shui-Jinn Wang, Tron-Min Chen
Publikováno v:
IEEE Photonics Technology Letters. 18:1146-1148
In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa81f9fcdcef2e4e8fdc43cce05a0a9
https://doi.org/10.1109/lpt.2006.873338
https://doi.org/10.1109/lpt.2006.873338
Autor:
Chuan Ping Juan, Shui-Jinn Wang, Huang-Chung Cheng, Kai-Ming Uang, Shu-Cheng Chang, Chao Hsuing Chen
Publikováno v:
Applied Physics Letters. 85:2358-2360
In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250–260μm−2 and length∕diameter in the range of 0.2–0.3μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e40f3817bea808b22a060b943b1227d
https://doi.org/10.1063/1.1791322
https://doi.org/10.1063/1.1791322
Low-noise p-GaN/i-ZnO/n-ZnO:Al Ultraviolet Photodetectors using Vapor Cooling Condensation Technique
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520b4930d81574822870e4d5b76ee435
https://doi.org/10.7567/ssdm.2009.i-7-5
https://doi.org/10.7567/ssdm.2009.i-7-5
Autor:
Chia-Lung Chang, Chao-Hsuing Chen, Shui-Jinn Wang, Rong-Ming Ko, Yi-Cheng Kuo, Wei-Chih Tsai, Zhi-fu Wen
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f46f1239101ce1761fcbf4957915d6c
https://doi.org/10.7567/ssdm.2006.p-8-9
https://doi.org/10.7567/ssdm.2006.p-8-9
Autor:
Chao-Hsuing Chen, Bor-Wen Liou, Shiue-Lung Chen, Tron-Min Chen, Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Yu-Cheng Yang
Publikováno v:
Applied Physics Letters. 87:011111
The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57867219b8065a194c5f2b7378468f7a
https://doi.org/10.1063/1.1993757
https://doi.org/10.1063/1.1993757
Autor:
Chin Hong Wong, Rong-Ming Ko, Shui-Jinn Wang, Kai-Ming Uang, Chien Hung Wu, Yi Cheng Kuo, Tron-Min Chen, Chao Hsuing Chen, Bor Wen Liou
Publikováno v:
Applied Physics Letters. 86:263103
The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited WCx films using a simple annealing/oxidization process was reported. It was found that thermal annealing of WCx films at 680°C for 30min in nitrogen followed by oxidation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a244efeffac33d151060640b9c698a03
https://doi.org/10.1063/1.1957115
https://doi.org/10.1063/1.1957115