Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chao-Hsin Wayne Wu"'
Autor:
Cheng-Ting Tsai, Hao-Chung Kuo, Wood-Hi Cheng, Tien-Tsorng Shih, Jian-Jang Huang, Huai-Yung Wang, Chun-Yen Peng, Chao-Hsin Wayne Wu, Yun-Chen Wu, Gong-Ru Lin
Publikováno v:
Journal of Lightwave Technology. 36:3332-3343
In this study, a 50-Gb/s 16-quadrature amplitude modulation discrete multitone (16-QAM-DMT) was applied to an 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL) at various temperature ranging from 25 °C to 85 °C. This study report
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae85af502c6ec26171ab97af8be5df9e
https://doi.org/10.1109/jlt.2018.2839193
https://doi.org/10.1109/jlt.2018.2839193
Publikováno v:
IEEE Transactions on Electron Devices. 62:4076-4081
The optical modulation bandwidths of light-emitting transistors (LETs) at different bias conditions are measured and compared to investigate the influence of the voltage-dependent charge-removing mechanism within the active region. The modulation ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb08f237dfe6102139f427101772a7c6
https://doi.org/10.1109/ted.2015.2493566
https://doi.org/10.1109/ted.2015.2493566
Publikováno v:
IEEE Transactions on Electron Devices. 61:3472-3476
In this paper, we demonstrate the improvement of cutoff frequency of the light-emitting transistor (LET) due to quantum well (QW) band-filling phenomenon (i.e., saturation) along with the carrier capturing and escaping processes in the base region. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ea7da98680b929025df531218d78ab
https://doi.org/10.1109/ted.2014.2349922
https://doi.org/10.1109/ted.2014.2349922