Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chao-Hsien Peng"'
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
In this work, a low-resistance and low-cost PVD-TiZrN barrier is evaluated for BEOL interconnect. Comparing to conventional PVD barrier, comparable Cu barrier and Cu wetting properties are obtained. Moreover, up to 55% of via resistance reduction is
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC); 2016, p174-176, 3p
Autor:
Mong-Song Liang, Chiapyng Lee, Chao-Hsien Peng, Ching-Hua Hsieh, Yu-Lin Kuo, Jing-Cheng Lin, Shau-Lin Shue, Cheng-Lin Huang, Chih-Huang Lai, Li-Chien Chen, Brian J. Daniels
Publikováno v:
Journal of The Electrochemical Society. 151:C176
Titanium zirconium nitride [(Ti,Zr)N] films were prepared on Si substrates by dc reactive magnetron sputtering from a Ti-5 atom % Zr alloy target in N 2 /Ar gas mixtures. Material characteristics of the (Ti,Zr)N films were investigated by X-ray photo
Autor:
Jing-Cheng Lin, Chih-Huang Lai, Shau-Lin Shue, Yu-Lin Kuo, Cheng-Lin Huang, Chao-Hsien Peng, Brian J. Daniels, Li-Chien Chen, Ching-Hua Hsieh, Mong-Song Liang, Chiapyng Lee
Publikováno v:
Electrochemical and Solid-State Letters. 6:C123
(Ti,Zr)N films were prepared by dc reactive magnetron sputtering from a Ti-5 atom % Zr alloy target in N 2 /Ar gas mixtures and then employed as diffusion barriers between Cu thin films and Si substrates. Material characteristics of the (Ti,Zr)N film